- 专利标题: METHOD OF FABRICATING RETICLE
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申请号: US16127017申请日: 2018-09-10
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公开(公告)号: US20190004436A1公开(公告)日: 2019-01-03
- 发明人: Hsueh-Yi CHUNG , Yung-Cheng CHEN , Fei-Gwo TSAI , Chi-Hung LIAO , Shih-Chi FU , Wei-Ti HSU , Jui-Ping CHUANG , Tzong-Sheng CHANG , Kuei-Shun CHEN , Meng-Wei CHEN
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F1/50 ; G03F1/78 ; G03F1/70 ; G03F1/68 ; H01L21/66
摘要:
A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.
公开/授权文献
- US10534272B2 Method of fabricating reticle 公开/授权日:2020-01-14
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