A resistive memory apparatus and a setting method for a resistive memory cell thereof are provided. The setting method includes: performing a first setting operation on the resistive memory cell, and performing a first verifying operation on the resistive memory cell after the first setting operation is finished; determining whether to perform a first resetting operation on the resistive memory cell according to a verifying result of the first verifying operation, and performing a second verifying operation on the resistive memory cell after the first resetting operation is determined to be performed and is finished; and determining whether to perform a second resetting operation on the resistive memory cell according to a verifying result of the second verifying operation, and performing a third verifying operation on the resistive memory cell after the second resetting operation is determined to be performed and is finished.