Variable resistance memory devices and methods of forming the same are provided. The variable resistance memory devices may include a substrate including a cell region and a peripheral region, first conductive lines on the substrate, second conductive lines traversing the first conductive lines, variable resistance structures at intersecting points of the first conductive lines and the second conductive lines, and bottom electrodes between the first conductive lines and the variable resistance structures. The cell region may include a boundary region contacting the peripheral region, and one of the first conductive lines is electrically insulated from one of the variable resistance structures that is on the boundary region and overlaps the one of the first conductive lines,