中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

14 records (took 0.015 seconds)

    Variable resistance memory devices and methods of forming the same
    5.
    发明授权
    Variable resistance memory devices and methods of forming the same 有权

    公开(公告)号：US10714686B2

    公开(公告)日：2020-07-14

    申请号：US15869892

    申请日：2018-01-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sungwon Kim ,  Sung-Ho Eun ,  Ilmok Park ,  Junghoon Park ,  Seulji Song ,  Ji-Hyun Jeong

    IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

    Abstract: Variable resistance memory devices and methods of forming the same are provided. The variable resistance memory devices may include a substrate including a cell region and a peripheral region, first conductive lines on the substrate, second conductive lines traversing the first conductive lines, variable resistance structures at intersecting points of the first conductive lines and the second conductive lines, and bottom electrodes between the first conductive lines and the variable resistance structures. The cell region may include a boundary region contacting the peripheral region, and one of the first conductive lines is electrically insulated from one of the variable resistance structures that is on the boundary region and overlaps the one of the first conductive lines.

    Variable resistance memory device including symmetrical memory cell arrangements and method of forming the same
    10.
    发明授权
    Variable resistance memory device including symmetrical memory cell arrangements and method of forming the same 有权

    公开(公告)号：US10971548B2

    公开(公告)日：2021-04-06

    申请号：US16354545

    申请日：2019-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung-Ho Eun ,  Daehwan Kang ,  Sungwon Kim ,  Youngbae Kim ,  Seokjae Won

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A variable resistance non-volatile memory device can include a semiconductor substrate and a plurality of first conductive lines each extending in a first direction perpendicular to the semiconductor substrate and spaced apart in a second direction on the semiconductor substrate. A second conductive line can extend in the second direction parallel to the semiconductor substrate on a first side of the plurality of first conductive lines and a third conductive line can extend in the second direction parallel to the semiconductor substrate on a second side of the plurality of first conductive lines opposite the first side of the plurality of first conductive lines. A plurality of first non-volatile memory cells can be on the first side of the plurality of first conductive lines and each can be coupled to the second conductive line and to a respective one of the plurality of first conductive lines, where each of the plurality of first non-volatile memory cells can include a switching element, a variable resistance element, and an electrode arranged in a first sequence. A plurality of second non-volatile memory cells can be on the second side of the plurality of first conductive lines and each can be coupled to the third conductive line and to a respective one of the plurality of first conductive lines, wherein each of the plurality of second non-volatile memory cells includes a switching element, a variable resistance element, and an electrode that are arranged in a second sequence, wherein the first sequence and the second sequence are symmetrical with one another about the plurality of first conductive lines.

Patent Agency Ranking