- 专利标题： Forming Interlayer Dielectric Material by Spin-On Metal Oxide Deposition
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申请号： US16232921申请日： 2018-12-26
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公开(公告)号： US20190131240A1公开(公告)日： 2019-05-02
- 发明人: Chi-Lin Teng , Jung-Hsun Tsai , Kai-Fang Cheng , Hsin-Yen Huang , Hai-Ching Chen , Tien-I Bao
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/8234 ; H01L29/51 ; H01L21/768 ; H01L29/417 ; H01L29/45 ; H01L23/528 ; H01L29/66 ; H01L23/485 ; H01L21/283 ; H01L21/31 ; H01L21/311 ; H01L21/3205 ; H01L21/3213 ; H01L23/522
摘要：
A plurality of high-k metal gate (HKMG) structures is formed over a substrate. The (HKMG) structures are separated by a plurality of gaps. The HKMG structures each include a first dielectric layer at an upper surface of the HKMG structure. The gaps are filled with a first conductive material. A portion of the first conductive material is removed in each of the gaps through an etching-back process. A metal oxide layer is formed using a spin-on deposition process. The metal oxide layer is formed over the (HKMG) structures and over the first conductive material. A second dielectric layer is formed over the metal oxide layer. An opening is etched in the second dielectric layer. The opening is etched through the second dielectric layer and through the metal oxide layer. The opening is filled with a second conductive material.
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