Invention Application
- Patent Title: ISOLATION PILLAR FIRST GATE STRUCTURES AND METHODS OF FORMING SAME
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Application No.: US15869541Application Date: 2018-01-12
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Publication No.: US20190221661A1Publication Date: 2019-07-18
- Inventor: Wei Zhao , Ming Hao Tang , Haiting Wang , Rui Chen , Yuping Ren , Hui Zang , Scott H. Beasor , Ruilong Xie
- Applicant: GLOBALFOUNDRIES INC.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/49 ; H01L21/265 ; H01L27/11 ; H01L21/762 ; H01L21/3105 ; H01L21/28 ; H01L29/423
Abstract:
A method of forming isolation pillars for a gate structure, the method including: providing a preliminary structure including a substrate having a plurality of fins thereon, an STI formed between adjacent fins, an upper surface of the STIs extending higher than an upper surface of the fins, and a hardmask over the upper surface of the fins and between adjacent STIs; forming a first trench in a first selected STI and between adjacent fins in a gate region, and forming a second trench in a second selected STI and between adjacent fins in a TS region; and filling the first and second trenches with an isolation fill thereby forming a first isolation pillar in the gate region and a second isolation pillar in the TS region, the first and second isolation pillars extending below the upper surface of the STIs.
Public/Granted literature
- US10600914B2 Isolation pillar first gate structures and methods of forming same Public/Granted day:2020-03-24
Information query
IPC分类:
