Invention Application
- Patent Title: SENSOR CHARACTERISTIC EVALUATION METHOD AND CHARGED PARTICLE BEAM DEVICE
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Application No.: US16182659Application Date: 2018-11-07
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Publication No.: US20190292046A1Publication Date: 2019-09-26
- Inventor: Toshiyuki MINE , Keiji WATANABE , Koji FUJISAKI , Masaharu KINOSHITA , Masatoshi MORISHITA , Daisuke RYUZAKI
- Applicant: HITACHI, LTD.
- Applicant Address: JP Tokyo
- Assignee: HITACHI, LTD.
- Current Assignee: HITACHI, LTD.
- Current Assignee Address: JP Tokyo
- Priority: JP2018-058900 20180326
- Main IPC: B81C99/00
- IPC: B81C99/00 ; G01R31/02 ; G01R31/28 ; H01J37/30 ; H01J37/305 ; H01J37/304

Abstract:
A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.
Public/Granted literature
- US10737937B2 Sensor characteristic evaluation method and charged particle beam device Public/Granted day:2020-08-11
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