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1.发明公开公开(公告)号：US20240162760A1
公开(公告)日：2024-05-16
申请号：US18507319
申请日：2023-11-13
Applicant: Hitachi, Ltd.
Inventor： Makoto ITO , Koichi WATANABE , Tsukasa FUNANE , Yosuke TANABE , Hisatoshi KIMURA , Keiji WATANABE
Abstract: An electric-power conversion device receives an electromagnetic wave transmitted from space and converts the electromagnetic wave into electric power. The electric-power conversion device includes: an electric-power conversion portion for receiving an electromagnetic wave transmitted from space and converting the electromagnetic wave into electric power; a propelling device or driving device for moving the electric-power conversion device; a positioning device for determining the position of the electric-power conversion device; a control device for controlling the propelling device or the driving device based on information about the position and the electric power received by the electric-power conversion portion; and an electric-power supply device for supplying the electric power received by the electric-power conversion portion to an electric system.
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公开(公告)号：US20190310161A1
公开(公告)日：2019-10-10
申请号：US16193003
申请日：2018-11-16
Applicant: Hitachi, Ltd.
Inventor： Keiji WATANABE , Hiroaki HASEGAWA , Hisanori MATSUMOTO , Daisuke RYUZAKI
Abstract: A sensor system that detects a vibration of a rotating part with a high accuracy even in a case in which a sensor is additionally attached is provided. The invention is directed to a sensor system includes a board that is installed in a rotating part of a cut processing machine; a plurality of acceleration sensors mounted on the board, and a signal processing unit (arithmetic operation). The signal processing unit detects a translational acceleration accompanying moving of the rotating part and a centrifugal acceleration accompanying rotation of the rotating part on the basis of acceleration data detected by each of the acceleration sensors.
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公开(公告)号：US20170362082A1
公开(公告)日：2017-12-21
申请号：US15610987
申请日：2017-06-01
Applicant: HITACHI, LTD.
Inventor： Keiji WATANABE , Shuntaro MACHIDA , Katsuya MIURA , Aki TAKEI , Tetsufumi KAWAMURA , Nobuyuki SUGII , Daisuke RYUZAKI
CPC classification number: B81C1/00531 , B05D3/064 , B81C99/0025 , B81C2201/0132 , B81C2201/0136 , B81C2201/0143 , Y10S148/042 , Y10S438/924
Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.
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公开(公告)号：US20200026262A1
公开(公告)日：2020-01-23
申请号：US16447611
申请日：2019-06-20
Applicant: HITACHI, LTD.
Inventor： Kenji OTSU , Keiji WATANABE , Hisanori MATSUMOTO
IPC: G05B19/418 , G06N20/00 , G06K9/62
Abstract: A machine-tool-state determination system configured to determine a state associated with a machine tool including a rotation mechanism for processing a member, the system including: a sensor configured to acquire a state value from the machine tool; and an analysis device, in which the analysis device: performs spectral analysis with time series data of the state value, to extract a rotational frequency of the rotation mechanism and a harmonic wave to the rotational frequency; calculates a ratio of an amplitude of the rotational frequency to an amplitude of the harmonic wave; generates feature-amount data including the state value and the ratio as feature amounts; performs clustering with the feature-amount data; and determines a state associated with the machine tool, based on a result of the clustering.
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公开(公告)号：US20180370793A1
公开(公告)日：2018-12-27
申请号：US15918502
申请日：2018-03-12
Applicant: Hitachi, Ltd.
Inventor： Masaharu KINOSHITA , Atsushi ISOBE , Kazuo ONO , Noriyuki SAKUMA , Tomonori SEKIGUCHI , Keiji WATANABE
Abstract: A manufacturing method of a MEMS sensor includes a step of, by irradiating a first hole formed in a second layer on a semiconductor substrate with a focused ion beam for a first predetermined time, forming a first sealing film, which seals the first hole, on the first hole, and a step of, by irradiating a second hole formed in the second layer with a focused ion beam for a second predetermined time, forming a second sealing film, which seals the second hole, on the second hole. At this time, each of the first predetermined time and the second predetermined time is a time in which thermal equilibrium of the second layer is maintainable, and the step of forming the first sealing film and the step of forming the second sealing film are performed repeatedly.
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Patent Agency Ranking
公开(公告)号：US20180267075A1
公开(公告)日：2018-09-20
申请号：US15763240
申请日：2016-03-18
Applicant: Hitachi, Ltd.
Inventor： Shuntaro MACHIDA , Nobuyuki SUGII , Keiji WATANABE , Daisuke RYUZAKI , Tetsufumi KAWAMURA , Kazuki WATANABE
CPC classification number: G01P15/0802 , B81C99/001 , B81C99/0025 , B81C99/0065 , B81C2201/0143 , B81C2201/0181 , B81C2203/038 , G01P15/125
Abstract: For the purpose of shortening the MEMS manufacturing TAT, the MEMS manufacturing method according to the present invention includes a step of extracting the first MEMS with first characteristic in a range approximate to the required characteristic from the plurality of MEMS preliminarily prepared on the main surface of the substrate, and a step of forming a second MEMS having the required characteristic by directly processing the first MEMS.
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公开(公告)号：US20180261423A1
公开(公告)日：2018-09-13
申请号：US15909601
申请日：2018-03-01
Applicant: Hitachi, Ltd.
Inventor： Keiji WATANABE , Toshiyuki MINE , Hiroyasu SHICHI , Masatoshi MORISHITA
IPC: H01J37/147 , H01J37/304 , H01J37/30 , H01J37/15
CPC classification number: H01J37/1471 , H01J37/15 , H01J37/3007 , H01J37/3045 , H01J37/3056 , H01J37/3171 , H01J2237/20285 , H01J2237/30455 , H01J2237/30472 , H01J2237/31735 , H01J2237/31749
Abstract: The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.
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公开(公告)号：US20190292046A1
公开(公告)日：2019-09-26
申请号：US16182659
申请日：2018-11-07
Applicant: HITACHI, LTD.
Inventor： Toshiyuki MINE , Keiji WATANABE , Koji FUJISAKI , Masaharu KINOSHITA , Masatoshi MORISHITA , Daisuke RYUZAKI
IPC: B81C99/00 , G01R31/02 , G01R31/28 , H01J37/30 , H01J37/305 , H01J37/304
Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.
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9.发明申请公开(公告)号：US20190062157A1
公开(公告)日：2019-02-28
申请号：US16015640
申请日：2018-06-22
Applicant: HITACHI, LTD.
Inventor： Keiji WATANABE , Hiroyasu SHICHI , Misuzu SAGAWA , Toshiyuki MINE , Daisuke RYUZAKI
IPC: B81C99/00 , B81C1/00 , H01J37/317 , H01J37/304 , H01J37/147 , G03F7/20
CPC classification number: B81C99/0025 , B81C1/00412 , B81C99/0065 , B81C2201/0143 , B81C2201/0159 , B81C2201/0198 , G03F7/2059 , H01J37/1474 , H01J37/304 , H01J37/3056 , H01J37/3174 , H01J2237/28 , H01J2237/31749 , H01J2237/31755 , H01J2237/31776
Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.
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公开(公告)号：US20190013179A1
公开(公告)日：2019-01-10
申请号：US16069796
申请日：2016-03-18
Applicant: HITACHI, LTD.
Inventor： Tetsufumi KAWAMURA , Misuzu SAGAWA , Kazuki WATANABE , Keiji WATANABE , Shuntaro MACHIDA , Nobuyuki SUGII , Daisuke RYUZAKI
IPC: H01J37/28 , H01L21/3065 , B81C1/00 , H01L21/66 , H01J37/305 , H01J37/302
CPC classification number: H01J37/28 , B81C1/00 , B81C2201/0132 , H01J37/3023 , H01J37/3056 , H01J2237/30411 , H01J2237/31745 , H01J2237/31749 , H01L21/3065 , H01L22/26
Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.
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