Invention Application
- Patent Title: Split Gate Non-volatile Memory Cells With FINFET Structure And HKMG Memory And Logic Gates, And Method Of Making Same
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Application No.: US16208150Application Date: 2018-12-03
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Publication No.: US20200176459A1Publication Date: 2020-06-04
- Inventor: Feng Zhou , JINHO KIM , XIAN LIU , SERGUEI JOURBA , CATHERINE DECOBERT , NHAN DO
- Applicant: Silicon Storage Technology, Inc.
- Main IPC: H01L27/11521
- IPC: H01L27/11521 ; H01L27/11526 ; H01L27/11531 ; H01L29/10 ; H01L29/423 ; H01L29/78 ; H01L29/788 ; H01L21/28 ; H01L29/66
Abstract:
A memory device having plurality of upwardly extending semiconductor substrate fins, a memory cell formed on a first fin and a logic device formed on a second fin. The memory cell includes source and drain regions in the first fin with a channel region therebetween, a polysilicon floating gate extending along a first portion of the channel region including the side and top surfaces of the first fin, a metal select gate extending along a second portion of the channel region including the side and top surfaces of the first fin, a polysilicon control gate extending along the floating gate, and a polysilicon erase gate extending along the source region. The logic device includes source and drain regions in the second fin with a second channel region therebetween, and a metal logic gate extending along the second channel region including the side and top surfaces of the second fin.
Public/Granted literature
Information query
IPC分类:
