- 专利标题： GALLIUM NITRIDE MATERIALS AND METHODS
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申请号： US16231225申请日： 2018-12-21
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公开(公告)号： US20200243651A9公开(公告)日： 2020-07-30
- 发明人: T. Warren Weeks, JR. , Edwin Lanier Piner , Thomas Gehrke , Kevin J. Linthicum
- 申请人： MACOM Technology Solutions Holdings, Inc.
- 申请人地址： US MA Lowell
- 专利权人： MACOM Technology Solutions Holdings, Inc.
- 当前专利权人： MACOM Technology Solutions Holdings, Inc.
- 当前专利权人地址： US MA Lowell
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L29/205 ; H01L21/02 ; H01L33/04 ; C30B23/02 ; C30B25/18 ; C30B29/06 ; C30B29/68 ; H01L33/06 ; H01L29/778 ; H01L29/78 ; H01L29/04 ; H01L29/06 ; H01L29/201 ; H01L29/66 ; H01L33/12 ; H01L33/00 ; H01L29/20 ; H01L29/225 ; H01L33/32 ; C30B29/40 ; C30B25/02
摘要：
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
公开/授权文献
- US20190229190A1 GALLIUM NITRIDE MATERIALS AND METHODS 公开/授权日：2019-07-25
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