Invention Application
- Patent Title: FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME
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Application No.: US17648166Application Date: 2022-01-17
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Publication No.: US20220140107A1Publication Date: 2022-05-05
- Inventor: Jian-Jou Lian , Chun-Neng LIN , Ming-Hsi YEH , Chieh-Wei CHEN , Tzu-Ang CHIANG
- Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co.,Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co.,Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/84 ; H01L29/78
Abstract:
A semiconductor device includes a gate electrode over a channel region of a semiconductor fin, first spacers over the semiconductor fin, and second spacers over the semiconductor fin. A lower portion of the gate electrode is between the first spacers. An upper portion of the gate electrode is above the first spacers. The second spacers are adjacent the first spacers opposite the gate electrode. The upper portion of the gate electrode is between the second spacers.
Public/Granted literature
- US11855193B2 Fin field-effect transistor device and method of forming the same Public/Granted day:2023-12-26
Information query
IPC分类:
