公开(公告)号：US20220140107A1

公开(公告)日：2022-05-05

申请号：US17648166

申请日：2022-01-17

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Jian-Jou Lian ,  Chun-Neng LIN ,  Ming-Hsi YEH ,  Chieh-Wei CHEN ,  Tzu-Ang CHIANG

IPC: H01L29/66 ,  H01L21/84 ,  H01L29/78

Abstract: A semiconductor device includes a gate electrode over a channel region of a semiconductor fin, first spacers over the semiconductor fin, and second spacers over the semiconductor fin. A lower portion of the gate electrode is between the first spacers. An upper portion of the gate electrode is above the first spacers. The second spacers are adjacent the first spacers opposite the gate electrode. The upper portion of the gate electrode is between the second spacers.