Invention Application
- Patent Title: GALLIUM NITRIDE-BASED SINTERED COMPACT AND METHOD FOR MANUFACTURING SAME
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Application No.: US17590120Application Date: 2022-02-01
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Publication No.: US20220153582A1Publication Date: 2022-05-19
- Inventor: Masami MESUDA , Hideto KURAMOCHI
- Applicant: TOSOH CORPORATION
- Applicant Address: JP Shunan-shi
- Assignee: TOSOH CORPORATION
- Current Assignee: TOSOH CORPORATION
- Current Assignee Address: JP Shunan-shi
- Priority: JP2015-069913 20150330,JP2015-089571 20150424,JP2015-150959 20150730,JP2015-152855 20150731
- Main IPC: C01B21/06
- IPC: C01B21/06 ; C23C14/34 ; C30B29/38 ; C04B35/58 ; C23C14/06 ; C30B23/02 ; C30B25/20 ; C30B29/40 ; C30B29/68 ; H01J37/34
Abstract:
A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.
Public/Granted literature
- US11802049B2 Gallium nitride-based sintered compact and method for manufacturing same Public/Granted day:2023-10-31
Information query
