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公开(公告)号：US20240158954A1
公开(公告)日：2024-05-16
申请号：US17772972
申请日：2020-10-27
Inventor： Yuya TSUCHIDA , Yuya SUEMOTO , Yoshihiro UEOKA , Masami MESUDA , Hideto KURAMOCHI , Takahiro NAGATA , Liwen SANG , Toyohiro CHIKYOW
IPC: C30B29/68 , C23C14/00 , C23C14/02 , C23C14/06 , C23C14/34 , C23C14/35 , C30B23/02 , C30B25/06 , C30B25/18 , C30B29/40 , H01L21/02 , H01L29/20 , H01L29/205 , H01L33/32 , H01S5/02
CPC classification number: C30B29/68 , C23C14/0036 , C23C14/021 , C23C14/0617 , C23C14/3407 , C23C14/35 , C30B23/025 , C30B25/06 , C30B25/186 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/0254 , H01L21/02631 , H01L21/02661 , H01L29/2003 , H01L29/205 , H01L33/32 , H01S5/021
Abstract: The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.
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公开(公告)号：US20210380488A1
公开(公告)日：2021-12-09
申请号：US17283866
申请日：2019-10-07
Applicant: TOSOH CORPORATION
Inventor： Masami MESUDA , Hideto KURAMOCHI , Yuya TSUCHIDA
IPC: C04B35/58 , C23C14/34 , C04B35/626
Abstract: The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.
A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.-
公开(公告)号：US20220153582A1
公开(公告)日：2022-05-19
申请号：US17590120
申请日：2022-02-01
Applicant: TOSOH CORPORATION
Inventor： Masami MESUDA , Hideto KURAMOCHI
IPC: C01B21/06 , C23C14/34 , C30B29/38 , C04B35/58 , C23C14/06 , C30B23/02 , C30B25/20 , C30B29/40 , C30B29/68 , H01J37/34
Abstract: A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.
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公开(公告)号：US20190071768A1
公开(公告)日：2019-03-07
申请号：US16078488
申请日：2017-02-20
Applicant: TOSOH-CORPORATION
Inventor： Ryo AKIIKE , Yuya TSUCHIDA , Hideto KURAMOCHI
Abstract: Provided are an oxide sintered body that can produce a transparent conductive oxide film having low resistance and exhibiting lower light absorption characteristics in a wide wavelength range, and a transparent conductive oxide film.An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio Hf/(In+Hf+Ta) is 0.2 at % to 3.0 at %, and the atomic ratio Ta/(In+Hf+Ta) is 0.02 at % to 1.3 at %, is used.
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公开(公告)号：US20220017424A1
公开(公告)日：2022-01-20
申请号：US17295191
申请日：2019-11-18
Applicant: TOSOH CORPORATION
Inventor： Hiroyuki HARA , Hideto KURAMOCHI , Kenichi ITOH
Abstract: It is difficult for a Cr—Si-based sintered body composed of chromium silicide (CrSi2) and silicon (Si) to have high strength.
Provided is a Cr—Si-based sintered body including Cr (chromium) and silicon (Si), in which the crystal structure attributed by X-ray diffraction is composed of chromium silicide (CrSi2) and silicon (Si), a CrSi2 phase is present at 60 wt % or more in a bulk, a density of the sintered body is 95% or more, and an average grain size of the CrSi2 phase is 60 μm or less.-
Patent Agency Ranking
公开(公告)号：US20210139328A1
公开(公告)日：2021-05-13
申请号：US16622737
申请日：2018-06-14
Applicant: TOSOH CORPORATION
Inventor： Masami MESUDA , Hideto KURAMOCHI
Abstract: Provided are gallium nitride particles that have a low oxygen content and a high moldability and allow a gallium nitride sputtering target having a high density and a high strength to be produced. By causing a mixed powder of gallium oxide and gallium nitride to react at a temperature of 1000-1100° C. such that an ammonia reaction amount per hour is 1 or more times (by mole) an amount of gallium charged, gallium nitride particles are obtained of which an oxygen content is 1 atm % or less, an average particle size of primary particles is 5 μm or more, and a particle size of a range of 10 area % from smallest particles of a particle size distribution (10% particle size) is 3 μm or less.
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公开(公告)号：US20230242401A1
公开(公告)日：2023-08-03
申请号：US17766257
申请日：2020-10-02
Applicant: TOSOH CORPORATION
Inventor： Masami MESUDA , Hideto KURAMOCHI , Shinichi HARA
IPC: C01B21/06 , C23C16/448 , C04B35/622 , C04B35/58 , C23C14/34
CPC classification number: C01B21/0632 , C23C16/4486 , C04B35/622 , C04B35/58 , C23C14/3414 , C01P2004/61 , C04B2235/725 , C04B2235/3286 , C04B2235/723 , C01P2004/20 , C01P2006/80
Abstract: High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at % or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.
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公开(公告)号：US20220149258A1
公开(公告)日：2022-05-12
申请号：US17422953
申请日：2020-01-15
Applicant: TOSOH CORPORATION
Inventor： Yoichiro KODA , Ryo AKIIKE , Hideto KURAMOCHI
Abstract: Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained.
Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following: 45 atm %≤Si/(Ru+Si)≤70 atm % 30 atm %≤Ru/(Ru+Si)≤55 atm %.-
公开(公告)号：US20210002755A1
公开(公告)日：2021-01-07
申请号：US17031294
申请日：2020-09-24
Applicant: TOSOH CORPORATION
Inventor： Ryo AKIIKE , Yuya TSUCHIDA , Hideto KURAMOCHI
IPC: C23C14/34 , C03C17/245 , C04B35/01 , H01B1/08 , C04B35/626 , H01L31/18 , H01B1/00 , C04B35/495 , C04B35/64 , H01L27/30 , H01L31/0224 , H01L31/0264 , C23C14/08 , C23C14/35 , H01B13/00 , H01J37/34
Abstract: An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.
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公开(公告)号：US20180072570A1
公开(公告)日：2018-03-15
申请号：US15562112
申请日：2016-03-24
Applicant: TOSOH CORPORATION
Inventor： Masami MESUDA , Hideto KURAMOCHI
CPC classification number: C01B21/0632 , C01P2006/10 , C01P2006/40 , C01P2006/80 , C04B35/58 , C23C14/0641 , C23C14/34 , C23C14/3414 , C30B23/025 , C30B25/20 , C30B29/38 , C30B29/406 , C30B29/68 , H01J37/3426
Abstract: The object of the present invention is to provide a sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity.A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.
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