公开(公告)号：US20240158954A1

公开(公告)日：2024-05-16

申请号：US17772972

申请日：2020-10-27

Applicant: TOSOH CORPORATION ,  National Institute for Materials Science

Inventor： Yuya TSUCHIDA ,  Yuya SUEMOTO ,  Yoshihiro UEOKA ,  Masami MESUDA ,  Hideto KURAMOCHI ,  Takahiro NAGATA ,  Liwen SANG ,  Toyohiro CHIKYOW

IPC: C30B29/68 ,  C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C30B23/02 ,  C30B25/06 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L33/32 ,  H01S5/02

CPC classification number: C30B29/68 ,  C23C14/0036 ,  C23C14/021 ,  C23C14/0617 ,  C23C14/3407 ,  C23C14/35 ,  C30B23/025 ,  C30B25/06 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/32 ,  H01S5/021

Abstract: The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.

公开(公告)号：US20230212734A1

公开(公告)日：2023-07-06

申请号：US17996718

申请日：2021-04-19

Applicant: TOSOH CORPORATION

Inventor： Yuya TSUCHIDA ,  Masami MESUDA ,  Hiroyuki HARA ,  Osamu MATSUNAGA

IPC: C23C14/18 ,  C23C14/58 ,  C23C14/34 ,  B22D7/00

CPC classification number: C23C14/185 ,  C23C14/5853 ,  C23C14/3414 ,  B22D7/005 ,  H01J37/3491

Abstract: Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.
An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm2; and the yttrium ingot has a relative density of greater than or equal to 96%.

公开(公告)号：US20230143194A1

公开(公告)日：2023-05-11

申请号：US17907674

申请日：2021-03-29

Applicant: TOSOH CORPORATION

Inventor： Yuya SUEMOTO ,  Yoshihiro UEOKA ,  Masami MESUDA

IPC: H01L21/02 ,  C23C14/54 ,  C23C14/06 ,  C23C14/34

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02378 ,  H01L21/02631 ,  H01L21/02458 ,  C23C14/54 ,  C23C14/0617 ,  C23C14/3407

Abstract: Provided are a crack-free laminated film and a structure including this laminated film. This laminated film includes: a buffer layer; and at least one layer of gallium nitride base film disposed on the buffer layer. Moreover, the compression stress of the entire laminated film is −2.0 to 5.0 GPa.

公开(公告)号：US20230287560A1

公开(公告)日：2023-09-14

申请号：US18180132

申请日：2023-03-08

Applicant: TOSOH CORPORATION ,  TOSOH SPECIALITY MATERIALS CORPORATION

Inventor： Masami MESUDA ,  Daiki SHONO ,  Kenichi ITOH ,  Koichi HANAWA

IPC: C23C14/34 ,  C23C14/14

CPC classification number: C23C14/3414 ,  C23C14/14

Abstract: A method for producing a chromium sintered body includes a heat treatment step of heat-treating electrolytic chromium flakes at 1,200° C. or higher and 1,400° C. or lower, and a firing step of, after the heat treatment step, filling a container with the electrolytic chromium flakes and firing a resulting filling product by hot isostatic pressing.

公开(公告)号：US20220153582A1

公开(公告)日：2022-05-19

申请号：US17590120

申请日：2022-02-01

Applicant: TOSOH CORPORATION

Inventor： Masami MESUDA ,  Hideto KURAMOCHI

IPC: C01B21/06 ,  C23C14/34 ,  C30B29/38 ,  C04B35/58 ,  C23C14/06 ,  C30B23/02 ,  C30B25/20 ,  C30B29/40 ,  C30B29/68 ,  H01J37/34

Abstract: A sputtering target for a gallium nitride thin film, which has a low oxygen content, a high density and a low resistivity. A gallium nitride powder having powder physical properties of a low oxygen content and a high bulk density is used and hot pressing is conducted at high temperature in high vacuum to prepare a gallium nitride sintered body having a low oxygen content, a high density and a low resistivity.

公开(公告)号：US20190106784A1

公开(公告)日：2019-04-11

申请号：US16206346

申请日：2018-11-30

Applicant: TOSOH CORPORATION

Inventor： Masami MESUDA ,  Keitaro MATSUMARU ,  Koyata TAKAHASHI ,  Ryou KIKUCHI ,  Tetsuo SHIBUTAMI

IPC: C23C14/34 ,  C22C29/16 ,  H01J37/34 ,  C04B35/58 ,  C04B35/626 ,  C04B41/88 ,  C04B35/645 ,  C04B37/02 ,  C04B41/00 ,  C04B41/51

Abstract: The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm3 to less than 5.0 g/cm3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

公开(公告)号：US20240175116A1

公开(公告)日：2024-05-30

申请号：US18552439

申请日：2022-03-25

Applicant: TOSOH CORPORATION

Inventor： Hiroyuki HARA ,  Masami MESUDA ,  Ayaka MASUDA

IPC: C23C14/06 ,  C23C14/34

CPC classification number: C23C14/0682 ,  C23C14/3407

Abstract: A Cr—Si film contains chromium (Cr) and silicon (Si). In the Cr—Si film, a composition range of the film is Cr/(Cr+Si)=0.25 to 0.75, and absolute values of TCR in increments of 10° C. in a temperature range of 40° C. to 150° C. are each 0 ppm/° C. or more and 100 ppm/° C. or less.

公开(公告)号：US20230242452A1

公开(公告)日：2023-08-03

申请号：US18007203

申请日：2021-07-27

Applicant: TOSOH CORPORATION

Inventor： Hiroyuki HARA ,  Masami MESUDA ,  Ayaka MASUDA

IPC: C04B35/575 ,  C23C14/34 ,  C04B35/58 ,  C04B35/626

CPC classification number: C04B35/575 ,  C23C14/3414 ,  C04B35/58092 ,  C04B35/62695

Abstract: An object of the present invention is to provide a high-density Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C) and is furthermore to provide at least one of the high-density Cr—Si—C-based sintered body, a sputtering target including the sintered body or a method for producing a film using the sputtering target. The present invention can provide a Cr—Si—C-based sintered body including chromium (Cr), silicon (Si) and carbon (C), wherein the sintered body has a relative density of 90% or more and a porosity of 13% or less.

公开(公告)号：US20230183844A1

公开(公告)日：2023-06-15

申请号：US17999050

申请日：2021-05-17

Applicant: TOSOH CORPORATION

Inventor： Ryo AKIIKE ,  Yoichiro KODA ,  Masami MESUDA

IPC: C22C30/00 ,  C22C24/00 ,  H10N10/851 ,  C01B33/06

CPC classification number: C22C30/00 ,  C22C24/00 ,  H10N10/8556 ,  C01B33/06 ,  C22C2202/02 ,  C01P2006/40 ,  C01P2006/32 ,  C01P2002/60

Abstract: A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.

公开(公告)号：US20210380488A1

公开(公告)日：2021-12-09

申请号：US17283866

申请日：2019-10-07

Applicant: TOSOH CORPORATION

Inventor： Masami MESUDA ,  Hideto KURAMOCHI ,  Yuya TSUCHIDA

IPC: C04B35/58 ,  C23C14/34 ,  C04B35/626

Abstract: The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.
A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.