Invention Application
- Patent Title: MULTIBIT FERROELECTRIC MEMORY CELLS AND METHODS FOR FORMING THE SAME
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Application No.: US17122360Application Date: 2020-12-15
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Publication No.: US20220189993A1Publication Date: 2022-06-16
- Inventor: Roshan TIRUKKONDA , Ramy Nashed Bassely SAID , Senaka KANAKAMEDALA , Rahul SHARANGPANI , Raghuveer S. MAKALA , Adarsh RAJASHEKHAR , Fei ZHOU
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Main IPC: H01L27/11597
- IPC: H01L27/11597 ; H01L27/11587 ; H01L27/1159
Abstract:
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers and memory stack structures vertically extending through the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel and a vertical stack of ferroelectric memory elements surrounding the vertical semiconductor channel and located at levels of the electrically conductive layers. Each of the ferroelectric memory elements includes a respective vertical stack of a first ferroelectric material portion and a second ferroelectric material portion that differs from the first ferroelectric material portion by at least one of a material composition and a lateral thickness.
Public/Granted literature
- US11450687B2 Multibit ferroelectric memory cells and methods for forming the same Public/Granted day:2022-09-20
Information query
IPC分类:
