公开(公告)号：US20220189993A1

公开(公告)日：2022-06-16

申请号：US17122360

申请日：2020-12-15

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Roshan TIRUKKONDA ,  Ramy Nashed Bassely SAID ,  Senaka KANAKAMEDALA ,  Rahul SHARANGPANI ,  Raghuveer S. MAKALA ,  Adarsh RAJASHEKHAR ,  Fei ZHOU

IPC: H01L27/11597 ,  H01L27/11587 ,  H01L27/1159

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers and memory stack structures vertically extending through the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel and a vertical stack of ferroelectric memory elements surrounding the vertical semiconductor channel and located at levels of the electrically conductive layers. Each of the ferroelectric memory elements includes a respective vertical stack of a first ferroelectric material portion and a second ferroelectric material portion that differs from the first ferroelectric material portion by at least one of a material composition and a lateral thickness.