Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US17659881Application Date: 2022-04-20
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Publication No.: US20220246640A1Publication Date: 2022-08-04
- Inventor: Keiichi SAWA , Kazuhiro MATSUO , Kazuhisa MATSUDA , Hiroyuki YAMASHITA , Yuta SAITO , Shinji MORI , Masayuki TANAKA , Kenichiro TORATANI , Atsushi TAKAHASHI , Shouji HONDA
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Priority: JP2019-048973 20190315
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11578 ; H01L27/11519
Abstract:
In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.
Public/Granted literature
- US11785774B2 Semiconductor device and method of manufacturing the same Public/Granted day:2023-10-10
Information query
IPC分类:
