公开(公告)号：US20220246640A1

公开(公告)日：2022-08-04

申请号：US17659881

申请日：2022-04-20

Applicant: KIOXIA CORPORATION

Inventor： Keiichi SAWA ,  Kazuhiro MATSUO ,  Kazuhisa MATSUDA ,  Hiroyuki YAMASHITA ,  Yuta SAITO ,  Shinji MORI ,  Masayuki TANAKA ,  Kenichiro TORATANI ,  Atsushi TAKAHASHI ,  Shouji HONDA

IPC: H01L27/11582 ,  H01L27/11578 ,  H01L27/11519

Abstract: In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.

公开(公告)号：US20240321995A1

公开(公告)日：2024-09-26

申请号：US18341865

申请日：2023-06-27

Applicant: Kioxia Corporation

Inventor： Masaya TODA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Shosuke FUJII ,  Shoichi KABUYANAGI ,  Masayuki TANAKA ,  Wakako MORIYAMA

IPC: H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L29/4908 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/78696 ,  H10B12/30 ,  H10B12/33 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/42392 ,  H01L29/7869

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer provided between the first electrode and the second electrode and including a first region, a second region, and a third region between the first region and the second region; a gate electrode facing the third region; a first insulating layer facing the first region; a second insulating layer facing the second region; and a gate insulating layer between the gate electrode and the oxide semiconductor layer, containing oxygen (O) and at least one metal element selected from a group consisting of Al, Hf, Zr, La, Y, Zn, In, Sn, and Ga, and having a chemical composition different from that of the oxide semiconductor layer.