- 专利标题: METHOD AND DEVICE FOR WAFER-LEVEL TESTING
-
申请号: US17809577申请日: 2022-06-29
-
公开(公告)号: US20220326300A1公开(公告)日: 2022-10-13
- 发明人: JUN HE , YU-TING LIN , WEI-HSUN LIN , YUNG-LIANG KUO , YINLUNG LU
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址: TW HSINCHU
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW HSINCHU
- 主分类号: G01R31/28
- IPC分类号: G01R31/28 ; G01R31/26
摘要:
The present disclosure provides a method and a system for testing semiconductor device. The method includes providing a device under test (DUT) having an input terminal and an output terminal; applying a voltage having a first voltage level to the input terminal of the DUT during a first period; applying a stress signal to the input terminal of the DUT during a second period subsequent to the first period; obtaining an output signal in response to the stress signal at the output terminal of the DUT; and comparing the output signal with the stress signal. The stress signal includes a plurality of sequences, each having a ramp-up stage and a ramp-down stage. The stress signal has a second voltage level and a third voltage level.
公开/授权文献
- US11754621B2 Method and device for wafer-level testing 公开/授权日:2023-09-12
信息查询