Invention Application
- Patent Title: VOLTAGE BREAKDOWN UNIFORMITY IN PIEZOELECTRIC STRUCTURE FOR PIEZOELECTRIC DEVICES
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Application No.: US17241620Application Date: 2021-04-27
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Publication No.: US20220344575A1Publication Date: 2022-10-27
- Inventor: Chih-Ming Chen , Chiao-Chun Hsu , Chung-Yi Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L41/273
- IPC: H01L41/273 ; C23C16/458 ; C23C16/46 ; H01L41/297 ; H01L41/318

Abstract:
In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.
Public/Granted literature
- US11832520B2 Voltage breakdown uniformity in piezoelectric structure for piezoelectric devices Public/Granted day:2023-11-28
Information query
IPC分类: