公开(公告)号：US11869761B2

公开(公告)日：2024-01-09

申请号：US17017854

申请日：2020-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Chun-Tsung Kuo ,  Jiech-Fun Lu ,  Min-Ying Tsai ,  Chiao-Chun Hsu ,  Ching I Li

IPC: H01L27/146 ,  H01L21/02 ,  H01L21/306

CPC classification number: H01L27/1463 ,  H01L21/02057 ,  H01L21/30604 ,  H01L27/1469 ,  H01L27/14634 ,  H01L27/14683 ,  H01L27/14698 ,  H01L27/1464 ,  H01L27/14636

Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensing die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

公开(公告)号：US11047050B2

公开(公告)日：2021-06-29

申请号：US16352227

申请日：2019-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chiao-Chun Hsu ,  Chih-Ming Chen ,  Chung-Yi Yu ,  Sheng-Hsun Lu

IPC: H01L21/67 ,  C23C18/12 ,  H01L21/02

Abstract: In some embodiments, a semiconductor fabrication tool is provided. The semiconductor fabrication tool includes a first processing zone having a first ambient environment and a second processing zone having a second ambient environment disposed at different location inside a processing chamber. A first exhaust port and a second exhaust port are disposed in the first and second processing zones, respectively. A first exhaust pipe couples the first exhaust port to a first individual exhaust output. A second exhaust pipe couples the second exhaust port to a second individual exhaust output, where the second exhaust pipe is separate from the first exhaust pipe. A first adjustable fluid control element controls the first ambient environment. A second adjustable fluid control element controls the second ambient environment, where the first adjustable fluid control element and the second adjustable fluid control element are independently adjustable.

公开(公告)号：US20220344575A1

公开(公告)日：2022-10-27

申请号：US17241620

申请日：2021-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Chiao-Chun Hsu ,  Chung-Yi Yu

IPC: H01L41/273 ,  C23C16/458 ,  C23C16/46 ,  H01L41/297 ,  H01L41/318

Abstract: In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.

公开(公告)号：US11387748B2

公开(公告)日：2022-07-12

申请号：US16801350

申请日：2020-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chiao-Chun Hsu ,  Chih-Ming Chen ,  Chung-Yi Yu ,  Lung Yuan Pan

IPC: H02N1/00

Abstract: In some embodiments, the present disclosure relates to a microelectromechanical system (MEMS) comb actuator including a comb structure. The comb structure includes a support layer having a first material and a plurality of protrusions extending away from a first surface of the support layer in a first direction. The plurality of protrusions are also made of the first material. The plurality of protrusions are separated along a second direction parallel to the first surface of the support layer. The MEMS comb actuator may further include a dielectric liner structure that continuously and completely covers the first surface of the support layer and outer surfaces of the plurality of protrusions. The dielectric liner structure includes a connective portion that continuously connects topmost surfaces of at least two of the plurality of protrusions.

公开(公告)号：US11832520B2

公开(公告)日：2023-11-28

申请号：US17241620

申请日：2021-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Ming Chen ,  Chiao-Chun Hsu ,  Chung-Yi Yu

IPC: H10N30/053 ,  C23C16/458 ,  C23C16/46 ,  H10N30/067 ,  H10N30/078

CPC classification number: H10N30/053 ,  C23C16/4588 ,  C23C16/46 ,  H10N30/067 ,  H10N30/078

Abstract: In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.

公开(公告)号：US20210335861A1

公开(公告)日：2021-10-28

申请号：US17017854

申请日：2020-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hung Cheng ,  Chun-Tsung Kuo ,  Jiech-Fun Lu ,  Min-Ying Tsai ,  Chiao-Chun Hsu ,  Ching I Li

IPC: H01L27/146

Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensing die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

公开(公告)号：US20210067058A1

公开(公告)日：2021-03-04

申请号：US16801350

申请日：2020-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chiao-Chun Hsu ,  Chih-Ming Chen ,  Chung-Yi Yu ,  Lung Yuan Pan

IPC: H02N1/00

Abstract: In some embodiments, the present disclosure relates to a microelectromechanical system (MEMS) comb actuator including a comb structure. The comb structure includes a support layer having a first material and a plurality of protrusions extending away from a first surface of the support layer in a first direction. The plurality of protrusions are also made of the first material. The plurality of protrusions are separated along a second direction parallel to the first surface of the support layer. The MEMS comb actuator may further include a dielectric liner structure that continuously and completely covers the first surface of the support layer and outer surfaces of the plurality of protrusions. The dielectric liner structure includes a connective portion that continuously connects topmost surfaces of at least two of the plurality of protrusions.