Invention Application
- Patent Title: MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US17871983Application Date: 2022-07-25
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Publication No.: US20220358980A1Publication Date: 2022-11-10
- Inventor: Zong-You LUO , Ya-Jui TSOU , Chee-Wee LIU , Shao-Yu LIN , Liang-Chor CHUNG , Chih-Lin WANG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L27/22 ; H01L43/12 ; H01L43/08 ; H01L43/10 ; H01L43/02
Abstract:
A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.
Public/Granted literature
- US11749328B2 Magnetoresistive memory device and manufacturing method thereof Public/Granted day:2023-09-05
Information query
