Invention Application
- Patent Title: Doping for Semiconductor Device with Conductive Feature
-
Application No.: US17872452Application Date: 2022-07-25
-
Publication No.: US20220367632A1Publication Date: 2022-11-17
- Inventor: Su-Hao Liu , Huicheng Chang , Chia-Cheng Chen , Liang-Yin Chen , Kuo-Ju Chen , Chun-Hung Wu , Chang-Miao Liu , Huai-Tei Yang , Lun-Kuang Tan , Wei-Ming You
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/167 ; H01L29/78 ; H01L21/02 ; H01L21/285 ; H01L29/66 ; H01L21/265 ; H01L29/417
Abstract:
The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.
Public/Granted literature
- US11742386B2 Doping for semiconductor device with conductive feature Public/Granted day:2023-08-29
Information query
IPC分类:
