Invention Application
- Patent Title: MEMORY STRUCTURE FOR LOW TEMPERATURE OPERATION
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Application No.: US17943038Application Date: 2022-09-12
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Publication No.: US20230005921A1Publication Date: 2023-01-05
- Inventor: Sagar SUTHRAM , Abhishek SHARMA , Wilfred GOMES , Pushkar RANADE , Kuljit S. BAINS , Tahir GHANI , Anand MURTHY
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L27/108
- IPC: H01L27/108 ; G11C5/06

Abstract:
A system can be designed with memory to operate in a low temperature environment. The low temperature memory can be customized for low temperature operation, having a gate stack to adjust a work function of the memory cell transistors to reduce the threshold voltage (Vth) relative to a standard memory device. The reduced temperature can improve the conductivity of other components within the memory, enabling increased memory array sizes, fewer vertical ground channels for stacked devices, and reduced operating power.
Information query
IPC分类: