Invention Publication
- Patent Title: Reduction of Line Wiggling
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Application No.: US18156123Application Date: 2023-01-18
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Publication No.: US20230154760A1Publication Date: 2023-05-18
- Inventor: Jiann-Horng Lin , Cheng-Li Fan , Chih-Hao Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/768 ; H01L21/3213 ; H01L21/033 ; H01L21/311
Abstract:
A method for reducing wiggling in a line includes forming a silicon patterning layer over a substrate and depositing a mask layer over the silicon patterning layer. The mask layer is patterned to form one or more openings therein. The mask layer is thinned and the one or more openings are widened, to provide a smaller height-to-width ratio. The pattern of the mask layer is then used to pattern the silicon patterning layer. The silicon patterning layer is used, in turn, to pattern a target layer where a metal line will be formed.
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