Invention Application
- Patent Title: MAGNETO-ELECTRIC LOW POWER ANALOGUE MAGNETIC TUNNEL JUNCTION MEMORY
-
Application No.: US17510436Application Date: 2021-10-26
-
Publication No.: US20230131445A1Publication Date: 2023-04-27
- Inventor: Saba Zare , Dimitri Houssameddine , Karthik Yogendra , Heng Wu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L43/10 ; H01L43/12 ; H01L43/02 ; H01L27/22
Abstract:
A device includes a Magnetic Tunnel Junction (MTJ) memory element comprising, a reference layer, a free layer, and a magnetic tunneling layer between the reference layer and the free layer; and a pair of magneto-electric controlling layers, which have in-plane uniaxial anisotropy, wherein the pair of magneto-electric controlling layers are disposed below the free layer.
Public/Granted literature
- US11823724B2 Magneto-electric low power analogue magnetic tunnel junction memory Public/Granted day:2023-11-21
Information query
