- 专利标题: SEMICONDUCTOR PROCESSING APPARATUS AND METHOD UTILIZING ELECTROSTATIC DISCHARGE (ESD) PREVENTION LAYER
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申请号: US18516703申请日: 2023-11-21
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公开(公告)号: US20240087945A1公开(公告)日: 2024-03-14
- 发明人: Tsai-Hao HUNG , Ping-Cheng KO , Tzu-Yang LIN , Fang-Yu LIU , Cheng-Han WU
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L21/687
- IPC分类号: H01L21/687 ; H01L21/66 ; H01L21/67 ; H01L21/677 ; H05F1/00
摘要:
Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
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