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公开(公告)号：US20210202297A1
公开(公告)日：2021-07-01
申请号：US17182782
申请日：2021-02-23
发明人： Tsai-Hao HUNG , Ping-Cheng KO , Tzu-Yang LIN , Fang-Yu LIU , Cheng-Han WU
IPC分类号： H01L21/687 , H01L21/677 , H01L21/67 , H05F1/00 , H01L21/66
摘要： Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
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公开(公告)号：US20200098558A1
公开(公告)日：2020-03-26
申请号：US16137742
申请日：2018-09-21
发明人： Chen-Yu LIU , Tzu-Yang LIN , Ya-Ching CHANG , Ching-Yu CHANG , Chin-Hsiang LIN
摘要： A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.
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公开(公告)号：US20240192601A1
公开(公告)日：2024-06-13
申请号：US18447673
申请日：2023-08-10
发明人： Tzu-Yang LIN , Ching-Yu CHANG , Chin-Hsiang LIN
IPC分类号： G03F7/11 , G03F7/09 , H01L21/027
CPC分类号： G03F7/11 , G03F7/091 , G03F7/094 , H01L21/0276
摘要： A patterning stack is provided. The patterning stack includes a bottom anti-reflective coating (BARC) layer over a substrate, a photoresist layer having a first etching resistance over the BARC layer, and a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer. The top coating layer includes a polymer having a polymer backbone including at least one functional unit of high etching resistance and one or more acid labile groups attacked to the polymer backbone or a silicon cage compound.
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4.发明公开公开(公告)号：US20240087945A1
公开(公告)日：2024-03-14
申请号：US18516703
申请日：2023-11-21
发明人： Tsai-Hao HUNG , Ping-Cheng KO , Tzu-Yang LIN , Fang-Yu LIU , Cheng-Han WU
IPC分类号： H01L21/687 , H01L21/66 , H01L21/67 , H01L21/677 , H05F1/00
CPC分类号： H01L21/68757 , H01L21/67167 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67201 , H01L21/67242 , H01L21/67742 , H01L22/10 , H05F1/00
摘要： Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
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公开(公告)号：US20230099053A1
公开(公告)日：2023-03-30
申请号：US17737821
申请日：2022-05-05
发明人： Tzu-Yang LIN , Chen-Yu LIU , Cheng-Han WU , Ching-Yu CHANG
IPC分类号： H01L21/768 , H01L21/02 , H01L21/3213
摘要： The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, portions of an adhesion layer, barrier layer and/or seed layer is protected by a layer of an organic mask material as portions of the adhesion layer, barrier layer and/or seed layer are removed. The layer of organic mask material is modified to improve its resistance to penetration by wet etchants used to remove exposed portions of the adhesion layer, barrier layer and/or seed layer. An example modification includes treating the layer of organic mask material with a surfactant that is absorbed into the layer of organic mask material.
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公开(公告)号：US20210103218A1
公开(公告)日：2021-04-08
申请号：US17247301
申请日：2020-12-07
发明人： Chen-Yu LIU , Tzu-Yang LIN , Ya-Ching CHANG , Ching-Yu CHANG , Chin-Hsiang LIN
IPC分类号： G03F7/11 , H01L21/027 , H01L29/66 , H01L29/10 , G03F7/20 , H01L21/02 , G03F7/16 , H01L29/78 , G03F7/075
摘要： A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.
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公开(公告)号：US20210311393A1
公开(公告)日：2021-10-07
申请号：US17150317
申请日：2021-01-15
发明人： Tzu-Yang LIN , Ching-Yu CHANG , Chin-Hsiang LIN
摘要： A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.
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公开(公告)号：US20230317647A1
公开(公告)日：2023-10-05
申请号：US17827415
申请日：2022-05-27
发明人： Tzu-Yang LIN , Chen-Yu LIU , Yung-Han CHUANG , Ming-Da CHENG , Ching-Yu CHANG
CPC分类号： H01L24/03 , G03F7/425 , C11D11/0047 , C11D3/30 , H01L2224/0346 , H01L2224/0362
摘要： A method for forming a semiconductor structure is provided. The method includes forming a patterned photoresist layer over a substrate and removing the patterned photoresist layer using a photoresist stripping composition that is free of dimethyl sulfoxide. The photoresist stripping composition includes an organic alkaline compound including at least one of a primary amine, secondary amine, a tertiary amine or a quaternary ammonium hydroxide or a salt thereof, an organic solvent selected from the group consisting of a glycol ether, a glycol acetate, a glycol, a pyrrolidone and mixtures thereof, and a polymer solubilizer.
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公开(公告)号：US20210202284A1
公开(公告)日：2021-07-01
申请号：US17100218
申请日：2020-11-20
发明人： Tzu-Yang LIN , Cheng-Han WU , Chen-Yu LIU , Kuo-Shu TSENG , Shang-Sheng LI , Chen Yi HSU , Yu-Cheng CHANG
IPC分类号： H01L21/67
摘要： A lithography includes a storage tank that stores process chemical fluid, an anti-collision frame, and an integrated sensor assembly. The storage tank includes a dispensing port positioned at a lowest part of the storage tank in a gravity direction. The anti-collision frame is coupled to the storage tank. An integrated sensor assembly is disposed on at least one of the anti-collision frame and the storage tank to measure a variation in fluid quality in response to fluid quality measurement of fluid.
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10.发明申请公开(公告)号：US20200335386A1
公开(公告)日：2020-10-22
申请号：US16559089
申请日：2019-09-03
发明人： Tsai-Hao HUNG , Ping-Cheng KO , Tzu-Yang LIN , Fang-Yu LIU , Cheng-Han WU
IPC分类号： H01L21/687 , H01L21/677 , H01L21/67 , H01L21/66 , H05F1/00
摘要： Semiconductor processing apparatuses and methods are provided in which an electrostatic discharge (ESD) prevention layer is utilized to prevent or reduce ESD events from occurring between a semiconductor wafer and one or more components of the apparatuses. In some embodiments, a semiconductor processing apparatus includes a wafer handling structure that is configured to support a semiconductor wafer during processing of the semiconductor wafer. The apparatus further includes an ESD prevention layer on the wafer handling structure. The ESD prevention layer includes a first material and a second material, and the second material has an electrical conductivity that is greater than an electrical conductivity of the first material.
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