Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
-
Application No.: US18675249Application Date: 2024-05-28
-
Publication No.: US20240322046A1Publication Date: 2024-09-26
- Inventor: Satoshi TORIUMI , Takashi HAMADA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Ryunosuke HONDA , Shunpei YAMAZAKI
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP 15081993 2015.04.13 JP 15082008 2015.04.13
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/822 ; H01L27/06 ; H01L27/12 ; H01L27/146 ; H01L29/24 ; H01L29/417 ; H01L29/423 ; H01L29/49 ; H01L29/51 ; H10B41/70
Abstract:
A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.
Information query
IPC分类:
