公开(公告)号：US20150053264A1

公开(公告)日：2015-02-26

申请号：US14514552

申请日：2014-10-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Sho KATO ,  Yoshikazu HIURA ,  Akihisa SHIMOMURA ,  Takashi OHTSUKI ,  Satoshi TORIUMI ,  Yasuyuki ARAI

IPC: H01L31/077 ,  H01L31/0376

CPC classification number: H01L31/077 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/20 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the butler layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

Abstract translation: 目的在于提高光电转换装置的转换效率，而不增加制造步骤。 光电转换装置包括使用在支撑基板上形成的具有一种导电类型的单晶半导体形成的第一半导体层，包括单晶区域和非晶区域的缓冲层，包括单晶区域的第二半导体层 和非晶区域，并且设置在管状层上方，以及设置在第二半导体层上的具有与一种导电类型相反的导电类型的第三半导体层。 单晶区域的比例高于第二半导体层中的第一半导体层侧的非晶区域的比例，并且非晶区域的比例高于第三半导体层侧的单晶区域的比例。

公开(公告)号：US20220037532A1

公开(公告)日：2022-02-03

申请号：US17504923

申请日：2021-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi TORIUMI ,  Takashi HAMADA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Ryunosuke HONDA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/51 ,  H01L29/49 ,  H01L29/417 ,  H01L27/12 ,  H01L27/146 ,  H01L27/1156 ,  H01L27/06 ,  H01L29/423 ,  H01L21/822

Abstract: A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.

公开(公告)号：US20170352746A1

公开(公告)日：2017-12-07

申请号：US15664106

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

公开(公告)号：US20160365454A1

公开(公告)日：2016-12-15

申请号：US15245268

申请日：2016-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NODA ,  Satoshi TORIUMI ,  Kazuki TANEMURA

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/0692 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.

Abstract translation: 包括氧化物半导体的半导体器件的电特性得到改善。 此外，制造具有小的电特性变化的高度可靠的晶体管。 提供用作基底绝缘膜的氧氮化物绝缘膜和与氧氮化物绝缘膜接触的晶体管。 晶体管包括与用作基极绝缘膜的氧氮化物绝缘膜接触的氧化物半导体膜。 通过热处理从氮氧化物绝缘膜释放的质荷比为30的气体的总量和通过热量从氮氧化物绝缘膜释放的质荷比为32的气体量的两倍 处理量大于或等于5×10 15 / cm 2且小于或等于5×10 16 / cm 2，或大于或等于5×10 15 / cm 2且小于或等于3×10 16 / cm 2。

公开(公告)号：US20240322046A1

公开(公告)日：2024-09-26

申请号：US18675249

申请日：2024-05-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Satoshi TORIUMI ,  Takashi HAMADA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Ryunosuke HONDA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12 ,  H01L27/146 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H10B41/70

CPC classification number: H01L29/7869 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/14645 ,  H01L27/14649 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78648 ,  H01L29/78696 ,  H10B41/70

Abstract: A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.

公开(公告)号：US20130130476A1

公开(公告)日：2013-05-23

申请号：US13680187

申请日：2012-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi TORIUMI ,  Makoto FURUNO

IPC: B08B7/04 ,  B08B7/00 ,  H01L21/20

CPC classification number: B08B7/04 ,  B08B7/00 ,  B08B7/0071 ,  B82Y40/00 ,  C23C16/0281 ,  C23C16/26 ,  C23C16/4405 ,  H01L21/20 ,  H01L29/1606 ,  H01L29/66431 ,  H01L29/7781 ,  H01M4/131 ,  H01M4/625 ,  H01M10/052 ,  Y02E60/122 ,  Y02P70/54

Abstract: A method for cleaning a hot-wall type film formation apparatus having a batch processing system with industrially high mass productivity is provided. In the method, a carbon film deposited on an inner wall or the like of a reaction chamber of the apparatus is removed efficiently in a short time. To remove the carbon film deposited on the inner wall of the reaction chamber by a thermal CVD method, the reaction chamber is heated at a temperature higher than or equal to 700° C. and lower than or equal to 800° C., and oxygen is introduced into the reaction chamber.

Abstract translation: 提供一种清洗具有工业上高质量生产率的批处理系统的热壁型成膜装置的方法。 在该方法中，在短时间内有效地除去沉积在装置的反应室的内壁等上的碳膜。 为了通过热CVD法除去沉积在反应室内壁上的碳膜，将反应室在高于或等于700℃且低于或等于800℃的温度下加热，并将氧气 被引入到反应室中。

公开(公告)号：US20170018631A1

公开(公告)日：2017-01-19

申请号：US15276993

申请日：2016-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Abstract translation: 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。

公开(公告)号：US20160300952A1

公开(公告)日：2016-10-13

申请号：US15091009

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi TORIUMI ,  Takashi HAMADA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Ryunosuke HONDA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/51 ,  H01L27/105 ,  H01L29/417 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49

Abstract: A minute transistor is provided. A semiconductor device includes a semiconductor over a substrate, a first conductor and a second conductor over the semiconductor, a first insulator over the first conductor and the second conductor, a second insulator over the semiconductor, a third insulator over the second insulator, and a third conductor over the third insulator. The third insulator is in contact with a side surface of the first insulator. The semiconductor includes a first region where the semiconductor overlaps with a bottom surface of the first conductor, a second region where the semiconductor overlaps with a bottom surface of the second conductor, and a third region where the semiconductor overlaps with a bottom surface of the third conductor. The length between a top surface of the semiconductor and the bottom surface of the third conductor is longer than the length between the first region and the third region.

Abstract translation: 提供一分钟晶体管。 半导体器件包括衬底上的半导体，半导体上的第一导体和第二导体，第一导体和第二导体上的第一绝缘体，半导体上的第二绝缘体，第二绝缘体上的第三绝缘体，以及 第三绝缘体上的第三导体。 第三绝缘体与第一绝缘体的侧表面接触。 半导体包括半导体与第一导体的底表面重叠的第一区域，半导体与第二导体的底表面重叠的第二区域和半导体与第三导体的底表面重叠的第三区域 导体。 半导体的顶表面和第三导体的底表面之间的长度比第一区域和第三区域之间的长度长。

公开(公告)号：US20160276487A1

公开(公告)日：2016-09-22

申请号：US15070320

申请日：2016-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Satoshi TORIUMI ,  Takashi HAMADA

IPC: H01L29/786 ,  H01L29/04 ,  H01L21/477 ,  H01L27/146 ,  H01L27/12 ,  H01L23/528 ,  H01L23/522 ,  H01L27/105 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02211 ,  H01L21/28158 ,  H01L21/477 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/14632 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78696

Abstract: A transistor with favorable electrical characteristics is provided. A minute transistor is provided. Provided is a semiconductor device including a first insulator over a substrate, a second insulator over the first insulator, a semiconductor over the second insulator, a first conductor and a second conductor over the semiconductor, a third insulator over the semiconductor, a fourth insulator over the third insulator, a third conductor over the fourth insulator, and a fifth insulator over the first insulator, the first conductor, and the second conductor. In the semiconductor device, the second insulator and the third insulator each include at least one element other than oxygen included in the semiconductor, respectively, and the semiconductor includes a region having a carbon concentration of 3×1018 atoms/cm3 or lower.

Abstract translation: 提供具有良好电特性的晶体管。 提供一分钟晶体管。 提供了一种半导体器件，其包括在衬底上的第一绝缘体，在第一绝缘体上的第二绝缘体，在第二绝缘体上的半导体，半导体上的第一导体和第二导体，半导体上的第三绝缘体， 所述第三绝缘体，在所述第四绝缘体上方的第三导体以及所述第一绝缘体上的第五绝缘体，所述第一导体和所述第二导体。 在半导体器件中，第二绝缘体和第三绝缘体分别包含除了包含在半导体中的氧以外的至少一种元素，半导体包括碳浓度为3×1018原子/ cm3以下的区域。

公开(公告)号：US20160056179A1

公开(公告)日：2016-02-25

申请号：US14824268

申请日：2015-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi TORIUMI ,  Yoshikazu HIURA ,  Mai SUGIKAWA

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02 ,  H01L29/786 ,  H01L23/522

CPC classification number: H01L27/1259 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/8258 ,  H01L23/53295 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a first layer, a second layer over the first layer, and a third layer over the second layer. The first layer includes a first transistor. The third layer includes a second transistor. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The second layer includes a first insulating film, a second insulating film, and a conductive film. The conductive film has a function of electrically connecting the first transistor and the second transistor. The first insulating film is over and in contact with the conductive film. The second insulating film is provided over the first insulating film. The second insulating film includes a region with a carbon concentration of greater than or equal to 1.77×1017 atoms/cm3 and less than or equal to 1.0×1018 atoms/cm3.

Abstract translation: 半导体器件包括第一层，第一层上的第二层和第二层上的第三层。 第一层包括第一晶体管。 第三层包括第二晶体管。 第一晶体管的沟道形成区域包括单晶半导体。 第二晶体管的沟道形成区域包括氧化物半导体。 第二层包括第一绝缘膜，第二绝缘膜和导电膜。 导电膜具有电连接第一晶体管和第二晶体管的功能。 第一绝缘膜与导电膜接触并接触。 第二绝缘膜设置在第一绝缘膜上。 第二绝缘膜包括碳浓度大于或等于1.77×1017原子/ cm3且小于或等于1.0×1018原子/ cm3的区域。