公开(公告)号：US20220037532A1

公开(公告)日：2022-02-03

申请号：US17504923

申请日：2021-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi TORIUMI ,  Takashi HAMADA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Ryunosuke HONDA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/51 ,  H01L29/49 ,  H01L29/417 ,  H01L27/12 ,  H01L27/146 ,  H01L27/1156 ,  H01L27/06 ,  H01L29/423 ,  H01L21/822

Abstract: A minute transistor is provided that includes a first insulator, a second insulator, a first, conductor, a second conductor, and third conductor, in which an angle is formed between a side surface of the first insulator and a top surface of the first conductor, and a length between the first conductor and a surface of the second conductor closest to the first conductor is at least greater than a length between the first conductor and the third conductor.

公开(公告)号：US20170025448A1

公开(公告)日：2017-01-26

申请号：US15285661

申请日：2016-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Junichi KOEZUKA

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/786 ,  H01L29/24

CPC classification number: H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

Abstract translation: 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

公开(公告)号：US20190185986A1

公开(公告)日：2019-06-20

申请号：US16285297

申请日：2019-02-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: C23C14/08 ,  C23C14/34 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  C04B35/453 ,  B28B11/24 ,  C04B35/64

CPC classification number: C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US20170016108A1

公开(公告)日：2017-01-19

申请号：US15189104

申请日：2016-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Hitomi SATO ,  Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Kenichi OKAZAKI ,  Motoki NAKASHIMA ,  Takashi SHIMAZU

IPC: C23C14/08 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  C23C14/34 ,  H01L21/02

CPC classification number: C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract translation: 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US20130126861A1

公开(公告)日：2013-05-23

申请号：US13675140

申请日：2012-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro TANAKA ,  Erika TAKAHASHI ,  Yuki IMOTO ,  Yuhei SATO

IPC: H01L29/786 ,  H01L21/36

CPC classification number: H01L29/7869 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02266 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  Y10T428/24628

Abstract: An amorphous region with low density is formed in an oxide insulating film containing zirconium. The amount of oxygen released from such an oxide insulating film containing zirconium by heating is large and a temperature at which oxygen is released is higher in the oxide insulating film than in a conventional oxide film (e.g., a silicon oxide film). When the insulating film is formed using a sputtering target containing zirconium in an oxygen atmosphere, the temperature of a surface on which the insulating film is formed may be controlled to be lower than a temperature at which a film to be formed starts to crystallize.

Abstract translation: 在含锆的氧化物绝缘膜中形成低密度的非晶区域。 通过加热从含氧锆的氧化物绝缘膜释放的氧量比氧化物绝缘膜（例如，氧化硅膜）的氧化物绝缘膜的释放温度高。 当在氧气氛中使用含有锆的溅射靶形成绝缘膜时，可以将形成有绝缘膜的表面的温度控制为低于待形成的膜开始结晶的温度。

公开(公告)号：US20160300952A1

公开(公告)日：2016-10-13

申请号：US15091009

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi TORIUMI ,  Takashi HAMADA ,  Tetsunori MARUYAMA ,  Yuki IMOTO ,  Yuji ASANO ,  Ryunosuke HONDA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/51 ,  H01L27/105 ,  H01L29/417 ,  H01L27/12 ,  H01L29/24 ,  H01L29/49

Abstract: A minute transistor is provided. A semiconductor device includes a semiconductor over a substrate, a first conductor and a second conductor over the semiconductor, a first insulator over the first conductor and the second conductor, a second insulator over the semiconductor, a third insulator over the second insulator, and a third conductor over the third insulator. The third insulator is in contact with a side surface of the first insulator. The semiconductor includes a first region where the semiconductor overlaps with a bottom surface of the first conductor, a second region where the semiconductor overlaps with a bottom surface of the second conductor, and a third region where the semiconductor overlaps with a bottom surface of the third conductor. The length between a top surface of the semiconductor and the bottom surface of the third conductor is longer than the length between the first region and the third region.

Abstract translation: 提供一分钟晶体管。 半导体器件包括衬底上的半导体，半导体上的第一导体和第二导体，第一导体和第二导体上的第一绝缘体，半导体上的第二绝缘体，第二绝缘体上的第三绝缘体，以及 第三绝缘体上的第三导体。 第三绝缘体与第一绝缘体的侧表面接触。 半导体包括半导体与第一导体的底表面重叠的第一区域，半导体与第二导体的底表面重叠的第二区域和半导体与第三导体的底表面重叠的第三区域 导体。 半导体的顶表面和第三导体的底表面之间的长度比第一区域和第三区域之间的长度长。

公开(公告)号：US20160125969A1

公开(公告)日：2016-05-05

申请号：US14993395

申请日：2016-01-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Tetsunori MARUYAMA ,  Takayuki SAITO ,  Yuki IMOTO ,  Noriaki UTO ,  Yuta ENDO ,  Hitomi SHIONOYA ,  Takuya HIROHASHI ,  Shunpei YAMAZAKI

IPC: H01B1/02

CPC classification number: H01B1/02 ,  C23C14/0676 ,  C23C14/3414 ,  C23C14/541 ,  C23C14/5806

Abstract: An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film.

Abstract translation: 本发明的目的是提供一种透明导电膜，其具有良好的透明性和低导电性。 另一个目的是降低使用包括锌和铝的导电氮氧化物形成的透明导电膜的电阻率。 另一个目的是提供使用包括锌和铝的导电氮氧化物形成的透明导电膜。 当使用包含锌的氧化物形成的透明导电膜中包含铝和氮以形成使用包括锌和铝的导电氮氧化物形成的透明导电膜时，透明导电膜可以具有降低的电阻率。 在形成使用包括锌和铝的导电氮氧化物形成的透明导电膜之后的热处理使得能够降低透明导电膜的电阻率。

公开(公告)号：US20160043230A1

公开(公告)日：2016-02-11

申请号：US14886723

申请日：2015-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro SAKATA ,  Tetsunori MARUYAMA ,  Yuki IMOTO

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/124 ,  H01L29/24

Abstract: Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.

Abstract translation: 已经理解了硅半导体的许多物理性质，而氧化物半导体的许多物理性质仍然不清楚。 特别是杂质对氧化物半导体的不利影响还不清楚。 鉴于上述，公开了防止或消除影响包括氧化物半导体层的半导体器件的电特性的杂质的结构。 设置在栅电极和氧化物半导体层之间并且氧化物半导体层中的氮浓度为1×1020原子/ cm3以下的栅极，氧化物半导体层和栅极绝缘层的半导体装置为 提供。

公开(公告)号：US20150162421A1

公开(公告)日：2015-06-11

申请号：US14583416

申请日：2014-12-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki IMOTO ,  Yuhei SATO

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02658 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7869

Abstract: The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen deficiencies. A stacked base film is formed, a first heat treatment is performed, an oxide semiconductor film is formed over and in contact with the stacked base film, and a second heat treatment is performed. In the stacked base film, a first base film and a second base film are stacked in this order. The first base film is an insulating oxide film from which oxygen is released by heating. The second base film is an insulating metal oxide film. An oxygen diffusion coefficient of the second base film is smaller than that of the first base film.

Abstract translation: 减少氧化物半导体膜中含有的水和氢的量，并且从底膜向氧化物半导体膜充分地供给氧以减少氧缺乏。 形成堆叠的基膜，进行第一热处理，在层叠的基膜上形成氧化物半导体膜，并且与层叠的基膜接触，进行第二热处理。 在层叠基膜中，依次层叠第一基膜和第二基膜。 第一基膜是通过加热而释放氧的绝缘氧化膜。 第二基膜是绝缘金属氧化物膜。 第二基膜的氧扩散系数小于第一基膜的氧扩散系数。

公开(公告)号：US20150137123A1

公开(公告)日：2015-05-21

申请号：US14602878

申请日：2015-01-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki IMOTO ,  Tetsunori MARUYAMA ,  Yuta ENDO

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

Abstract: In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

Abstract translation: 在包括氧化物半导体膜的晶体管中，其包括用于从氧化物半导体膜（氢捕获膜）捕获氢的膜和用于扩散氢的膜（氢可渗透膜），氢从氧化物半导体膜转移到 通过热处理通过氢气渗透膜的氢捕获膜。 具体地，包含氧化物半导体膜的晶体管的基膜或保护膜具有氢捕获膜和氢可渗透膜的堆叠层结构。 此时，氢氧渗透膜形成在与氧化物半导体膜接触的一侧。 之后，通过热处理从氧化物半导体膜释放的氢气通过氢可渗透膜转移到氢捕获膜。