- 专利标题: Cascode Amplifier Bias Circuits
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申请号: US18624973申请日: 2024-04-02
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公开(公告)号: US20240348211A1公开(公告)日: 2024-10-17
- 发明人: Jonathan James Klaren , David Kovac , Eric S. Shapiro , Christopher C. Murphy , Robert Mark Englekirk , Keith Bargroff , Tero Tapio Ranta
- 申请人: pSemi Corporation
- 申请人地址: US CA San Diego
- 专利权人: pSemi Corporation
- 当前专利权人: pSemi Corporation
- 当前专利权人地址: US CA San Diego
- 分案原申请号: US16935999 2020.07.22
- 主分类号: H03F1/22
- IPC分类号: H03F1/22 ; H03F1/30 ; H03F1/56 ; H03F3/193 ; H03F3/195 ; H03F3/213 ; H03F3/24
摘要:
Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.
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