Invention Application
- Patent Title: NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
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Application No.: US18344022Application Date: 2023-06-29
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Publication No.: US20250006840A1Publication Date: 2025-01-02
- Inventor: Rachel A. Steinhardt , Kevin P. O'Brien , Dmitri Evgenievich Nikonov , John J. Plombon , Tristan A. Tronic , Ian Alexander Young , Matthew V. Metz , Marko Radosavljevic , Carly Rogan , Brandon Holybee , Raseong Kim , Punyashloka Debashis , Dominique A. Adams , I-Cheng Tung , Arnab Sen Gupta , Gauri Auluck , Scott B. Clendenning , Pratyush P. Buragohain , Hai Li
- Applicant: INTEL CORPORATION
- Applicant Address: US CA SANTA CLARA
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA SANTA CLARA
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/76 ; H01L29/786
Abstract:
In one embodiment, a negative capacitance transistor device includes a perovskite semiconductor material layer with first and second perovskite conductors on opposite ends of the perovskite semiconductor material layer. The device further includes a dielectric material layer on the perovskite semiconductor material layer between the first and second perovskite conductors, a perovskite ferroelectric material layer on the dielectric material layer, and a third perovskite conductor on the perovskite ferroelectric material layer.
Information query
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