公开(公告)号：US20240429301A1

公开(公告)日：2024-12-26

申请号：US18341467

申请日：2023-06-26

Applicant: Intel Corporation

Inventor： Rachel A. Steinhardt ,  Dmitri Evgenievich Nikonov ,  Kevin P. O'Brien ,  John J. Plombon ,  Tristan A. Tronic ,  Ian Alexander Young ,  Matthew V. Metz ,  Marko Radosavljevic ,  Carly Rogan ,  Brandon Holybee ,  Raseong Kim ,  Punyashloka Debashis ,  Dominique A. Adams ,  I-Cheng Tung ,  Arnab Sen Gupta ,  Gauri Auluck ,  Scott B. Clendenning ,  Pratyush P. Buragohain

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786

Abstract: A transistor device may be formed with a doped perovskite material as a channel region. The doped perovskite material may be formed via an epitaxial growth process from a seed layer, and the channel regions of the transistor device may be formed from lateral overgrowth from the epitaxial growth process.

公开(公告)号：US12125893B2

公开(公告)日：2024-10-22

申请号：US18130334

申请日：2023-04-03

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Chia-Ching Lin ,  Raseong Kim ,  Ashish Verma Penumatcha ,  Uygar Avci ,  Ian Young

IPC: H01L29/51 ,  H01L27/088 ,  H01L29/423 ,  H01L29/78 ,  H03H9/17

CPC classification number: H01L29/516 ,  H01L27/0886 ,  H01L29/42356 ,  H01L29/78391 ,  H01L29/7851 ,  H03H9/17

Abstract: Describe is a resonator that uses anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. The use of AFE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, additional current drive is also achieved from the piezoelectric response generated to due to AFE material. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above or below the AFE based transistor. Increased drive signal from the AFE results in larger output signal and larger bandwidth.

公开(公告)号：US20230058938A1

公开(公告)日：2023-02-23

申请号：US17409483

申请日：2021-08-23

Applicant: Intel Corporation

Inventor： Punyashloka Debashis ,  Dmitri Evgenievich Nikonov ,  Hai Li ,  Chia-Ching Lin ,  Raseong Kim ,  Tanay A. Gosavi ,  Ashish Verma Penumatcha ,  Uygar E. Avci ,  Marko Radosavljevic ,  Ian Alexander Young

IPC: G11C11/22 ,  H01L27/1159

Abstract: A pbit device, in one embodiment, includes a first field-effect transistor (FET) that includes a source region, a drain region, a source electrode on the source region, a drain electrode on the drain region, a channel region between the source and drain regions, a dielectric layer on a surface over the channel region, an electrode layer above the dielectric layer, and a ferroelectric (FE) material layer between the dielectric layer and the electrode layer. The pbit device also includes a second FET comprising a source electrode, a drain electrode, and a gate electrode. The drain electrode of the second FET is connected to the drain electrode of the first FET.

公开(公告)号：US20200212532A1

公开(公告)日：2020-07-02

申请号：US16238421

申请日：2019-01-02

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Chia-ching Lin ,  Raseong Kim ,  Ashish Verma Penumatcha ,  Uygar Avci ,  Ian Young

IPC: H01P7/10 ,  H01L27/02 ,  H01L49/02 ,  H01P11/00

Abstract: Describe is a resonator that uses ferroelectric (FE) material in a capacitive structure. The resonator includes a first plurality of metal lines extending in a first direction; an array of capacitors comprising ferroelectric material; a second plurality of metal lines extending in the first direction, wherein the array of capacitors is coupled between the first and second plurality of metal lines; and a circuitry to switch polarization of at least one capacitor of the array of capacitors. The switching of polarization regenerates acoustic waves. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using metal lines above and adjacent to the FE based capacitors.

公开(公告)号：US09947805B2

公开(公告)日：2018-04-17

申请号：US15151381

申请日：2016-05-10

Applicant: Intel Corporation

Inventor： Chytra Pawashe ,  Kevin Lin ,  Anurag Chaudhry ,  Raseong Kim ,  Seiyon Kim ,  Kelin Kuhn ,  Sasikanth Manipatruni ,  Rafael Rios ,  Ian A. Young

IPC: H01H51/22 ,  H01L29/84 ,  H01H59/00 ,  B82Y10/00 ,  H01H1/00 ,  H01L29/04 ,  H01L29/06 ,  H01L29/161 ,  H01H9/02

CPC classification number: H01L29/84 ,  B82Y10/00 ,  H01H1/0094 ,  H01H9/0271 ,  H01H59/0009 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/161

Abstract: Nanowire-based mechanical switching devices are described. For example, a nanowire relay includes a nanowire disposed in a void disposed above a substrate. The nanowire has an anchored portion and a suspended portion. A first gate electrode is disposed adjacent the void, and is spaced apart from the nanowire. A first conductive region is disposed adjacent the first gate electrode and adjacent the void, and is spaced apart from the nanowire.

公开(公告)号：US20250006841A1

公开(公告)日：2025-01-02

申请号：US18345127

申请日：2023-06-30

Applicant: Intel Corporation

Inventor： Arnab Sen Gupta ,  Dmitri Evgenievich Nikonov ,  John J. Plombon ,  Rachel A. Steinhardt ,  Punyashloka Debashis ,  Kevin P. O'Brien ,  Matthew V. Metz ,  Scott B. Clendenning ,  Brandon Holybee ,  Marko Radosavljevic ,  Ian Alexander Young ,  I-Cheng Tung ,  Sudarat Lee ,  Raseong Kim ,  Pratyush P. Buragohain

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/221 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a transistor includes a gate of strontium ruthenate and a ferroelectric gate dielectric layer of barium titanate. In order to prevent migration of ruthenium from the strontium ruthenate to the barium titanate, a barrier layer is placed between the gate and the ferroelectric gate dielectric layer. The barrier layer may be a metal oxide, such as strontium oxide, barium oxide, zirconium oxide, etc.

公开(公告)号：US20250006839A1

公开(公告)日：2025-01-02

申请号：US18343203

申请日：2023-06-28

Applicant: Intel Corporation

Inventor： Kevin P. O'Brien ,  Dmitri Evgenievich Nikonov ,  Rachel A. Steinhardt ,  Pratyush P. Buragohain ,  John J. Plombon ,  Hai Li ,  Gauri Auluck ,  I-Cheng Tung ,  Tristan A. Tronic ,  Dominique A. Adams ,  Punyashloka Debashis ,  Raseong Kim ,  Carly Rogan ,  Arnab Sen Gupta ,  Brandon Holybee ,  Marko Radosavljevic ,  Uygar E. Avci ,  Ian Alexander Young ,  Matthew V. Metz

IPC: H01L29/78 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66

Abstract: A transistor device may include a first perovskite gate material, a first perovskite ferroelectric material on the first gate material, a first p-type perovskite semiconductor material on the first ferroelectric material, a second perovskite ferroelectric material on the first semiconductor material, a second perovskite gate material on the second ferroelectric material, a third perovskite ferroelectric material on the second gate material, a second p-type perovskite semiconductor material on the third ferroelectric material, a fourth perovskite ferroelectric material on the second semiconductor material, a third perovskite gate material on the fourth ferroelectric material, a first source/drain metal adjacent a first side of each of the first semiconductor material and the second semiconductor material, a second source/drain metal adjacent a second side opposite the first side of each of the first semiconductor material and the second semiconductor material, and dielectric materials between the source/drain metals and the gate materials.

公开(公告)号：US20230253475A1

公开(公告)日：2023-08-10

申请号：US18130334

申请日：2023-04-03

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Chia-Ching Lin ,  Raseong Kim ,  Ashish Verma Penumatcha ,  Uygar Avci ,  Ian Young

IPC: H01L29/51 ,  H01L27/088 ,  H01L29/78 ,  H03H9/17 ,  H01L29/423

CPC classification number: H01L29/516 ,  H01L27/0886 ,  H01L29/7851 ,  H03H9/17 ,  H01L29/78391 ,  H01L29/42356

Abstract: Describe is a resonator that uses anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. The use of AFE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, additional current drive is also achieved from the piezoelectric response generated to due to AFE material. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above or below the AFE based transistor. Increased drive signal from the AFE results in larger output signal and larger bandwidth.

公开(公告)号：US20190334026A1

公开(公告)日：2019-10-31

申请号：US15962634

申请日：2018-04-25

Applicant: INTEL CORPORATION

Inventor： Raseong Kim ,  Uygar Avci ,  Ian Young

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66

Abstract: An embodiment includes an apparatus comprising: a transistor including an epitaxial source, a channel, and an epitaxial drain; a fin that includes the channel, the channel including a long axis and a short axis; a source contact corresponding to the source; and a drain contact corresponding to the drain; wherein (a) an additional axis intersects each of the source contact, the source, the drain, and the drain contact, and (b) the additional axis is parallel to the long axis. Other embodiments are described herein.

公开(公告)号：US10457548B2

公开(公告)日：2019-10-29

申请号：US15573342

申请日：2015-06-22

Applicant: Intel Corporation

Inventor： Kevin Lai Lin ,  Chytra Pawashe ,  Raseong Kim ,  Ian A. Young ,  Kanwal Jit Singh ,  Robert L. Bristol

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/768

Abstract: A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.