发明授权
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
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申请号: US337969申请日: 1982-01-08
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公开(公告)号: US4542485A公开(公告)日: 1985-09-17
- 发明人: Hiroshi Iwahashi , Masamichi Asano
- 申请人: Hiroshi Iwahashi , Masamichi Asano
- 申请人地址: JPX
- 专利权人: Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人: Tokyo Shibaura Denki Kabushiki Kaisha
- 当前专利权人地址: JPX
- 优先权: JPX56-4323 19810114; JPX56-60111 19810421; JPX56-90398 19810612; JPX56-118749 19810729; JPX56-118750 19810729
- 主分类号: G05F3/24
- IPC分类号: G05F3/24 ; G11C5/00 ; G11C5/14 ; G11C7/22 ; G11C8/00 ; G11C8/06 ; G11C8/10 ; G11C17/08 ; G11C13/00 ; G11C11/40
摘要:
A semiconductor integrated circuit comprises a first MOS transistor connected at the drain to a power source terminal of a high potential power source and supplied at the gate with a predetermined voltage, a logic circuit including MOS transistors provided between the power source terminal and a circuit point at a potential and operating in a potential range between the high potential and the circuit point, and a circuit for making the potential at the circuit point coincide with the potential at the source of the first MOS transistor.