发明授权
- 专利标题: Semiconductor memory device
- 专利标题(中): 半导体存储器件
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申请号: US729200申请日: 1985-05-01
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公开(公告)号: US4636982A公开(公告)日: 1987-01-13
- 发明人: Yoshihiro Takemae , Tomio Nakano , Kimiaki Sato
- 申请人: Yoshihiro Takemae , Tomio Nakano , Kimiaki Sato
- 申请人地址: JPX Kawasaki
- 专利权人: Fujitsu Limited
- 当前专利权人: Fujitsu Limited
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX59-88331 19840504
- 主分类号: G11C11/401
- IPC分类号: G11C11/401 ; G11C8/12 ; G11C11/4076 ; G11C11/408 ; G11C11/4096 ; G11C11/4097 ; H01L29/93 ; G11C7/00 ; G11C11/24
摘要:
A semiconductor memory device including at least two groups, each of said groups including a plurality of memory cell array blocks. The number of the memory cell array blocks which are activated in one group is made different from the number of memory cell array blocks which are activated in another group by providing a sequential circuit, thus reducing the maximum power consumption.