发明授权
- 专利标题： Process for fabricating materials for ferroelectric, high dielectric constant, and integrated circuit applications
- 专利标题（中）： 用于制造铁电，高介电常数和集成电路应用材料的工艺
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申请号： US981133申请日： 1992-11-24
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公开(公告)号： US5423285A公开(公告)日： 1995-06-13
- 发明人: Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
- 申请人： Carlos A. Paz de Araujo , Joseph D. Cuchiaro , Michael C. Scott , Larry D. McMillan
- 申请人地址： JPX Colorado Springs CO Colorado Springs
- 专利权人： Olympus Optical Co., Ltd.,Symetrix Corporation
- 当前专利权人： Olympus Optical Co., Ltd.,Symetrix Corporation
- 当前专利权人地址： JPX Colorado Springs CO Colorado Springs
- 主分类号： B05D1/00
- IPC分类号： B05D1/00 ; B05D3/04 ; B05D7/24 ; C01G35/00 ; C23C16/44 ; C23C16/448 ; C23C16/455 ; C23C16/46 ; C23C16/48 ; C23C16/52 ; C23C18/12 ; C23C26/02 ; C30B7/00 ; H01C7/10 ; H01L21/02 ; H01L21/314 ; H01L21/316 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L21/8247 ; H01L27/04 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L41/24 ; H05K3/10 ; C30B25/02
摘要：
A precursor comprising a metal 2-ethylhexanoate in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed. If the metal is titanium, the precursor comprises titanium 2-methoxyethoxide having at least a portion of its 2-methoxyethoxide ligands replaced by 2-ethylhexanoate. If the metal is a highly electropositive element, the solvent comprises 2-methoxyethanol. If the metal is lead, bismuth, thallium, or antimony, 1% to 75% excess metal is included in the precursor to account for evaporation of the oxide during baking and annealing.
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