发明授权
- 专利标题： Semiconductor integrated circuit device and process of manufacturing the same
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US190596申请日： 1994-02-02
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公开(公告)号： US5508540A公开(公告)日： 1996-04-16
- 发明人: Shuji Ikeda , Koichi Imato , Kazuo Yoshizaki , Kohji Yamasaki , Soichiro Hashiba , Keiichi Yoshizumi , Yasuko Yoshida , Kousuke Okuyama , Mitsugu Oshima , Kazushi Tomita , Tsuyoshi Tabata , Kazushi Fukuda , Junichi Takano , Toshiaki Yamanaka , Chiemi Hashimoto , Motoko Kawashima , Fumiyuki Kanai , Takashi Hashimoto
- 申请人： Shuji Ikeda , Koichi Imato , Kazuo Yoshizaki , Kohji Yamasaki , Soichiro Hashiba , Keiichi Yoshizumi , Yasuko Yoshida , Kousuke Okuyama , Mitsugu Oshima , Kazushi Tomita , Tsuyoshi Tabata , Kazushi Fukuda , Junichi Takano , Toshiaki Yamanaka , Chiemi Hashimoto , Motoko Kawashima , Fumiyuki Kanai , Takashi Hashimoto
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-029510 19930219; JPX5-049117 19930310; JPX5-179575 19930721
- 主分类号： H01L27/11
- IPC分类号： H01L27/11 ; H01L27/108 ; H01L29/04 ; H01L29/76
摘要：
A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.
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