发明授权
- 专利标题： Capacitor structure of semiconductor memory cell and fabrication process thereof
- 专利标题（中）： 半导体存储单元的电容结构及其制造工艺
-
申请号： US958444申请日： 1997-10-27
-
公开(公告)号： US5864153A公开(公告)日： 1999-01-26
- 发明人: Nicolas Nagel , Kenji Katori
- 申请人： Nicolas Nagel , Kenji Katori
- 申请人地址： JPX
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX
- 优先权： JPX8-308705 19961105; JPX8-350912 19961227
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L21/02 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L27/04 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L29/92 ; H01L29/76 ; H01L29/94 ; H01L31/119
摘要：
A capacitor structure of a semiconductor memory cell such as a FERAM has an upper electrode less susceptible a damage even by heat-treatment in a hydrogen gas atmosphere. The capacitor structure includes a lower electrode, a capacitor thin film formed of a ferroelectric thin film formed on the lower electrode, and an upper electrode formed on the capacitor thin film. The upper electrode is made of Ru.sub.1-x O.sub.x (0.1
公开/授权文献
- US4243400A Apparatus for producing fibers from heat-softening materials 公开/授权日：1981-01-06
信息查询
