发明授权
- 专利标题: Semiconductor integrated circuit with tungston silicide nitride thermal resistor
- 专利标题(中): 半导体集成电路与钨硅化硅热电阻
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申请号: US988799申请日: 1997-12-11
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公开(公告)号: US06025632A公开(公告)日: 2000-02-15
- 发明人: Takeshi Fukuda , Hiroshi Takenaka , Hidetoshi Furukawa , Takeshi Fukui , Daisuke Ueda
- 申请人: Takeshi Fukuda , Hiroshi Takenaka , Hidetoshi Furukawa , Takeshi Fukui , Daisuke Ueda
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electronics Corp.
- 当前专利权人: Matsushita Electronics Corp.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX8-335333 19961216
- 主分类号: H01L29/74
- IPC分类号: H01L29/74 ; H01L21/822 ; H01L23/58 ; H01L27/04 ; H01L27/06 ; H01L27/08 ; H01L23/62
摘要:
A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor integrated circuit is produced by a method including the steps of: forming a tungsten silicide nitride film on a semiconductor substrate; patterning the tungsten silicide nitride film in a predetermined pattern to form a thermal resistor; and forming a pair of electrodes to be connected to the thermal resistor. The semiconductor integrated circuit is provided so as to have a predetermined resistance by measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through heating of the thermal resistor with electric power.