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公开(公告)号：US06329262B1
公开(公告)日：2001-12-11
申请号：US09256738
申请日：1999-02-24
IPC分类号： H01L2162
CPC分类号： H01L27/0658 , H01L27/0802
摘要： A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor integrated circuit is produced by a method including the steps of: forming a tungsten silicide nitride film on a semiconductor substrate; patterning the tungsten silicide nitride film in a predetermined pattern to form a thermal resistor; and forming a pair of electrodes to be connected to the thermal resistor. The semiconductor integrated circuit is provided so as to have a predetermined resistance by measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through heating of the thermal resistor with electric power.
摘要翻译： 半导体集成电路包括由包含至少约5重量％的硅的钨硅氮化物制成的热电阻器，并且直接或经由绝缘膜形成在半导体衬底上。 半导体集成电路通过包括以下步骤的方法制造：在半导体衬底上形成硅化钨化硅膜; 以预定图案图案化硅化钨氮化膜以形成热电阻; 并形成一对要连接到热电阻器的电极。 半导体集成电路通过测量半导体集成电路的电特性而具有预定的电阻; 获得所测量的电特性和所需电特性之间的差以计算热敏电阻的电阻的所需调整量; 并且通过用电力加热热敏电阻器来调整热敏电阻的电阻达到调节量。
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2.发明授权
公开(公告)号：US06025632A
公开(公告)日：2000-02-15
申请号：US988799
申请日：1997-12-11
CPC分类号： H01L27/0658 , H01L27/0802
摘要： A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor integrated circuit is produced by a method including the steps of: forming a tungsten silicide nitride film on a semiconductor substrate; patterning the tungsten silicide nitride film in a predetermined pattern to form a thermal resistor; and forming a pair of electrodes to be connected to the thermal resistor. The semiconductor integrated circuit is provided so as to have a predetermined resistance by measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through heating of the thermal resistor with electric power.
摘要翻译： 半导体集成电路包括由包含至少约5重量％的硅的钨硅氮化物制成的热电阻器，并且直接或通过绝缘膜形成在半导体衬底上。 半导体集成电路通过包括以下步骤的方法制造：在半导体衬底上形成硅化钨化硅膜; 以预定图案图案化硅化钨氮化膜以形成热电阻; 并形成一对要连接到热电阻器的电极。 半导体集成电路通过测量半导体集成电路的电特性而具有预定的电阻; 获得测量的电特性和期望的电特性之间的差以计算所需热调节电阻的调整量; 并且通过用电力加热热敏电阻器来调整热敏电阻的电阻达到调节量。
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公开(公告)号：US06245628B1
公开(公告)日：2001-06-12
申请号：US09031039
申请日：1998-02-26
申请人： Takeshi Fukui , Hidetoshi Furukawa , Daisuke Ueda
发明人： Takeshi Fukui , Hidetoshi Furukawa , Daisuke Ueda
IPC分类号： H01L21265
CPC分类号： H01L29/66196 , H01L29/8605
摘要： A resistive area 7 is formed selectively on a semi-insulating substrate 1, and ohmic electrodes 10 are formed on both ends of the resistive area. Then a photo resist 14 having an opening 13 between the electrodes 10 is so formed as not completely across the resistive area 7. A desirable resistance value is thus obtained by removing the resistance area 7 by etching through the opening 13 gradually.
摘要翻译： 选择性地在半绝缘基板1上形成电阻区域7，并且在电阻区域的两端形成欧姆电极10。 然后，在电极10之间具有开口13的光致抗蚀剂14形成为不完全穿过电阻区域7.因此通过逐渐通过开口13进行蚀刻去除电阻区域7，从而获得所需的电阻值。
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4.发明授权Method of making a semiconductor device including testing before thinning the semiconductor substrate 有权制造半导体器件的方法包括在稀薄半导体衬底之前的测试公开(公告)号：US06365513B1
公开(公告)日：2002-04-02
申请号：US09162232
申请日：1998-09-29
IPC分类号： H01L2166
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A via hole having a bottom is formed in a substrate and then a conductor layer is formed at least over a sidewall of the via hole. Thereafter, the substrate is thinned by removing a portion of the substrate opposite to another portion of the substrate in which the via hole is formed such that the conductor layer is exposed.
摘要翻译： 在衬底中形成具有底部的通孔，然后在通孔的至少一个侧壁上形成导体层。 此后，通过去除衬底的与形成通孔的衬底的另一部分相对的部分使得导体层暴露而使衬底变薄。
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5.发明授权公开(公告)号：US06649463B2
公开(公告)日：2003-11-18
申请号：US09754308
申请日：2001-01-05
IPC分类号： H01L2120
CPC分类号： H01C17/23 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： A regulating resistor network includes a plurality of resistors connected in parallel to each other. Each of these resistors is cuttable by being irradiated with light, and a resistance value of the regulating resistor network is adjustable by cutting at least one of the resistors off.
摘要翻译： 调节电阻网络包括彼此并联连接的多个电阻器。 这些电阻器中的每一个可通过照射光而被切割，并且通过切断至少一个电阻来调整调节电阻网络的电阻值。
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公开(公告)号：US06201288B1
公开(公告)日：2001-03-13
申请号：US09432107
申请日：1999-11-02
IPC分类号： H01L2900
CPC分类号： H01C17/23 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： A regulating resistor network includes a plurality of resistors connected in parallel to each other. Each of these resistors is cuttable by being irradiated with light, and a resistance value of the regulating resistor network is adjustable by cutting at least one of the resistors off.
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公开(公告)号：US07439621B1
公开(公告)日：2008-10-21
申请号：US09707844
申请日：2000-11-08
IPC分类号： H01L23/34 , H01L23/552
CPC分类号： H01L23/552 , H01L27/0207 , H01L27/088 , H01L2223/6644 , H01L2924/0002 , H01L2924/00
摘要： The RF device of the present invention includes: a semiconductor substrate; and first and second semiconductor components provided on the substrate. Each of the components includes source electrodes, a gate electrode and a drain electrode. And multiple through holes, which pass through the substrate in the thickness direction, are opened in a region of the substrate between the two components. To enhance the effect of suppressing electrical interference between the components, a gap between two adjacent ones of the through holes is preferably smaller than the thickness of the substrate.
摘要翻译： 本发明的RF器件包括：半导体衬底; 以及设置在基板上的第一和第二半导体部件。 每个组件包括源电极，栅电极和漏电极。 并且在两个部件之间的基板的区域中打开穿过基板的厚度方向上的多个通孔。 为了增强抑制部件之间的电气干扰的效果，两个相邻的通孔之间的间隙优选小于基板的厚度。
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公开(公告)号：US5708292A
公开(公告)日：1998-01-13
申请号：US704163
申请日：1996-08-28
申请人： Hidetoshi Furukawa , Daisuke Ueda
发明人： Hidetoshi Furukawa , Daisuke Ueda
IPC分类号： H01L29/04 , H01L29/423 , H03F1/30 , H03F3/193 , H01L31/036
CPC分类号： H03F3/1935 , H01L29/045 , H01L29/42316 , H03F1/306
摘要： Variations in the waveform of high-frequency signals amplified by a field-effect transistor (FET) in a power amplification circuit due to changes in temperature are reduced. A FET having an n-type active layer, a source electrode, a drain electrode and a gate electrode is formed on a (1 0 0)-crystal plane of a semi-insulating GaAs substrate. The FET is protected by a passivation film. The angle .theta., formed between the longitudinal axial direction of the gate electrode and the -direction, is set at an angle of from 0.degree. to 90.degree. corresponding to the impurity concentration of the n-type active layer, in order that the temperature coefficient of the FET threshold voltage becomes substantially equal to the temperature coefficient of the gate bias voltage applied from a power supply to the gate electrode. If the angle .theta. is set at 45.degree., then the temperature coefficient of the FET threshold voltage becomes zero.
摘要翻译： 降低了由于温度变化而在功率放大电路中由场效晶体管（FET）放大的高频信号的波形的变化。 在半绝缘GaAs衬底的（110°）晶面上形成具有n型有源层，源电极，漏电极和栅电极的FET。 FET由钝化膜保护。 形成在栅电极的纵向轴向和<0 -1 -1方向之间的角度θ被设定为对应于n型有源层的杂质浓度的0°至90°的角度 ，以使FET阈值电压的温度系数基本上等于从电源施加到栅电极的栅偏压的温度系数。 如果角度θ设定为45°，则FET阈值电压的温度系数为零。
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公开(公告)号：US06653714B2
公开(公告)日：2003-11-25
申请号：US10300440
申请日：2002-11-20
IPC分类号： H01L27082
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a base region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译： 横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域 具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起基底区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。
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公开(公告)号：US06503808B1
公开(公告)日：2003-01-07
申请号：US09687251
申请日：2000-10-13
IPC分类号： H01L21331
CPC分类号： H01L29/66242 , H01L29/7317
摘要： A lateral bipolar transistor includes: a substrate; a first insulative region formed on the substrate; a first semiconductor region of a first conductivity type selectively formed on the first insulative region; a second insulative region formed so as to substantially cover the first semiconductor region; and a second semiconductor region of a second conductivity type different from the first conductivity type, a second semiconductor region being selectively formed, wherein: the second insulative region has a first opening which reaches a surface of the first semiconductor region, and the first semiconductor region has a second opening which reaches the underlying first insulative region, the second opening being provided in a position corresponding to the first opening of the second insulative region; the second semiconductor region is formed so as to fill the first opening and the second opening, thereby functioning as a bass region; a lower portion of the second semiconductor region which at least fills the second opening is formed by lateral growth from a face of the first semiconductor region defining a side wall of the second opening; and the first semiconductor region includes an emitter region and a collector region formed therein.
摘要翻译： 横向双极晶体管包括：衬底; 形成在所述基板上的第一绝缘区域; 选择性地形成在所述第一绝缘区域上的第一导电类型的第一半导体区域; 形成为基本上覆盖所述第一半导体区域的第二绝缘区域; 以及与第一导电类型不同的第二导电类型的第二半导体区域，选择性地形成第二半导体区域，其中：第二绝缘区域具有到达第一半导体区域的表面的第一开口，第一半导体区域 具有到达下面的第一绝缘区域的第二开口，第二开口设置在与第二绝缘区域的第一开口对应的位置; 第二半导体区域形成为填充第一开口和第二开口，从而起低音区域的作用; 至少填充第二开口的第二半导体区域的下部通过从限定第二开口的侧壁的第一半导体区域的表面横向生长形成; 并且第一半导体区域包括形成在其中的发射极区域和集电极区域。
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