发明授权
- 专利标题： Method of an apparatus for sputtering
- 专利标题（中）： 溅射装置的方法
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申请号： US759431申请日： 1996-12-05
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公开(公告)号： US6110328A公开(公告)日： 2000-08-29
- 发明人: Junichi Shimizu , Shujiro Watanabe , Satoru Takaki , Hisashi Osaki , Takuji Oyama , Eiichi Ando
- 申请人： Junichi Shimizu , Shujiro Watanabe , Satoru Takaki , Hisashi Osaki , Takuji Oyama , Eiichi Ando
- 申请人地址： JPX Tokyo
- 专利权人： Asahi Glass Company Ltd.
- 当前专利权人： Asahi Glass Company Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-205704 19930728
- 主分类号： C03C17/00
- IPC分类号： C03C17/00 ; C03C17/22 ; C03C17/245 ; C03C17/34 ; C23C14/06 ; C23C14/08 ; C23C14/34 ; C23C14/35 ; G02F1/1343 ; H01B1/08
摘要：
A sputtering method comprises applying a negative voltage intermittently in a constant periodic cycle to a cathode disposed in a vacuum chamber, wherein the negative voltage is intermittently applied so that a time during which the negative voltage is not applied includes a time during which the voltage is controlled to be zero volt in a range of from 10 .mu.s to 10 ms, and the zero voltage time is equal to or longer than the time required by one arcing from its generation to extinction.
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