发明授权
- 专利标题: Method of forming an aluminum protection guard structure for a copper metal structure
- 专利标题(中): 形成铜金属结构的铝保护结构的方法
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申请号: US09629940申请日: 2000-08-01
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公开(公告)号: US06444544B1公开(公告)日: 2002-09-03
- 发明人: Chu-Wei Hu , Chung-Te Lin , Kuo-Hua Pan , Hsien-Chin Lin
- 申请人: Chu-Wei Hu , Chung-Te Lin , Kuo-Hua Pan , Hsien-Chin Lin
- 主分类号: H01L21326
- IPC分类号: H01L21326
摘要:
A method of forming aluminum guard structures in copper interconnect structures, used to protect the copper interconnect structures from a laser write procedure, performed to an adjacent copper fuse element, has been developed. The method features forming guard structure openings in an upper level of the copper interconnect structures, in a region adjacent to a copper fuse element. Deposition and patterning of an aluminum layer result in the formation of aluminum guard structures, located in the guard structure openings. The aluminum guard structures protect the copper interconnect structures from the oxidizing and corrosive effects of oxygen, fluorine and water ions, which are generated during a laser write procedure, performed to the adjacent copper fuse element.