Invention Grant
US06524968B2 Method for forming insulating film and for manufacturing integrated circuit
失效
用于形成绝缘膜和用于制造集成电路的方法
- Patent Title: Method for forming insulating film and for manufacturing integrated circuit
- Patent Title (中): 用于形成绝缘膜和用于制造集成电路的方法
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Application No.: US09970692Application Date: 2001-10-05
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Publication No.: US06524968B2Publication Date: 2003-02-25
- Inventor: Masashi Takahashi , Toshio Nagata , Yoshirou Tsurugida , Takashi Ohsako , Hirotaka Mori , Akihiko Ohara , Hidetsugu Uchida , Hiroaki Uchida , Katsuji Yoshida , Masahiro Takahashi
- Applicant: Masashi Takahashi , Toshio Nagata , Yoshirou Tsurugida , Takashi Ohsako , Hirotaka Mori , Akihiko Ohara , Hidetsugu Uchida , Hiroaki Uchida , Katsuji Yoshida , Masahiro Takahashi
- Priority: JP2001-205530 20010706
- Main IPC: H01L2131
- IPC: H01L2131
Abstract:
A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.
Public/Granted literature
- US20030008523A1 METHOD FOR FORMING INSULATING FILM AND FOR MANUFACTURING INTEGRATED CIRCUIT Public/Granted day:2003-01-09
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