摘要:
Methods and apparatus to facilitate improve code division multiple access (CDMA) receivers are disclosed. An example method disclosed herein comprises: receiving a signal containing first portions that are based on known data and second portions that are based on unknown data; generating a training signal, from the received signal, that substantially represents one or more of the first portions; adapting filter coefficients using the training signal; and equalizing the received signal using the adapted filter coefficients.
摘要:
A method of producing a semiconductor device includes the steps of preparing an SOQ (Silicon On Quartz) substrate in which a semiconductor layer is formed on a quartz substrate; forming a plurality of semiconductor device forming regions in the SOQ substrate; forming a crack inspection pattern in the SOQ substrate; inspecting the crack inspection pattern to detect a crack in the crack inspection pattern in a first inspection step; and inspecting the semiconductor device forming regions to detect a crack in the semiconductor device forming regions in a second inspection step when the crack is detected in the crack inspection pattern in the first inspection step.
摘要:
Methods and apparatus to perform frequency-domain equalization in high-speed downlink packet access (HSDPA) receivers for wireless channels with large delay-spreads are disclosed. An example method comprises computing a first frequency-domain equalizer (FDE) coefficient for a first set of multipaths, computing a second FDE coefficient for a second set of multipaths, computing a first equalized signal by equalizing a received code division multiple access (CDMA) signal with the first FDE coefficient, computing a second equalized signal by equalizing the received CDMA signal with the second FDE coefficient, delaying the first equalized signal by a delay difference between the first and the second sets, and combining the delayed first equalized signal and the second equalized signal.
摘要:
Methods and apparatus to perform fractional-spaced channel estimation for frequency-domain equalizers in high-speed downlink packet access (HSDPA) receivers are disclosed. An example method comprises computing a first fractionally-spaced time-domain channel estimate from an oversampled CDMA signal, and computing a first chip-interval frequency-domain equalizer (FDE) coefficient from the first fractionally-spaced channel estimate.
摘要:
Methods and apparatus to facilitate improve code division multiple access (CDMA) receivers are disclosed. An example method disclosed herein comprises: receiving a signal containing first portions that are based on known data and second portions that are based on unknown data; generating a training signal, from the received signal, that substantially represents one or more of the first portions; adapting filter coefficients using the training signal; and equalizing the received signal using the adapted filter coefficients.
摘要:
Traditionally, providing parallel processing within a multi-core system has been very difficult. Here, however, a system is provided where serial source code is automatically converted into parallel source code, and a processing cluster is reconfigured “on the fly” to accommodate the parallelized code based on an allocation of memory and compute resources. Thus, the processing cluster and its corresponding system programming tool provide a system that can perform parallel processing from a serial program that is transparent to a user. Generally, a control node connected to the address and data leads of a host processor uses messages to control the processing of data in a processing cluster. The cluster includes nodes of parallel processors, shared function memory, a global load/store, and hardware accelerators all connected to the control node by message busses. A crossbar data interconnect routes data to the cluster circuits separate from the message busses.
摘要:
Methods and apparatus to perform closed-loop transmit diversity with frequency-domain equalizers in high-speed downlink packet access (HSDPA) receivers are disclosed. An example method comprises receiving a first signal representative of a first code division multiple access (CDMA) signal received from a first transmit antenna and a second signal representative of a second CDMA signal received from a second transmit antenna, computing a first channel estimate for a first path from the first transmit antenna to the receiver, computing a second channel estimate for a second path from the second transmit antenna to the receiver, and computing a frequency-domain equalizer (FDE) coefficient for the first path based on the first and the second channel estimates.
摘要:
Blind transport format detection with sliding window trace-back for evaluating decodings to candidate block lengths together with piecewise linear approximation of the reliability figure (logarithm of ratio of maximum survivor path metric minus minimum survivor path metric divided by 0 state path metric minus minimum survivor path metric) with a small lookup table plus simple logic.
摘要:
In a first embodiment, Tetraethyl Orthosilicate Si(OC2H5)4 is used at the process temperature of 650° C.±5° C. as film forming material, to decrease crystal defects occurring during deposition. In a second embodiment, annealing is carried out in sparse oxygen gas atmosphere after deposition, to mend crystal defects that occurred during deposition. In a third embodiment, initial temperature of the CVD device is kept at about 400° C., whereby the start of natural oxidation of the deposition surface is prevented and production circumstances of the semiconductor element is not deteriorated. Then, the CVD device is heated up to CVD temperature of about 750° C. or about 650° C., to deposit oxide.
摘要:
A method of fabricating a semiconductor device includes the steps of forming a first film of silicon nitride or silicon oxynitride on a polysilicon layer, forming a second film of silicon oxide on the first film by chemical vapor deposition, and oxygen-annealing the second film to form a tunnel oxide film. The presence of the silicon nitride or silicon oxynitride film enables an annealing process with a high oxidation capability to be used without oxidizing the polysilicon layer. The leakage of unwanted current through the tunnel oxide film can thereby be reduced, improving the data retention characteristics of devices such as flash memories.