公开(公告)号：US06524968B2

公开(公告)日：2003-02-25

申请号：US09970692

申请日：2001-10-05

Applicant: Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

Inventor： Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

IPC: H01L2131

CPC classification number: H01L21/28211 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/31662

Abstract: A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.

Abstract translation: 提供一种形成绝缘膜的方法，其能够抑制在硅衬底上形成的氧化硅膜的自发生长和由暴露于大气中引起的膜的厚度增加。 在允许具有预定厚度的二氧化硅层在硅晶体的表面上生长之后，二氧化硅的表面暴露于不含羟基的有机气体或暴露于氨气中。

公开(公告)号：US20070080394A1

公开(公告)日：2007-04-12

申请号：US11541671

申请日：2006-10-03

Applicant: Akihiko Ohara

Inventor： Akihiko Ohara

IPC: H01L29/788

CPC classification number: H01L27/115 ,  H01L27/11519

Abstract: A nonvolatile memory includes a plurality of drain regions and a plurality of source regions, and a plurality of control gate regions. The drain regions and the source regions are formed on a semiconductor chip so as to extend parallel to each other and extend between opposite ends of the semiconductor chip, and resistances of the source regions per unit length along its longitudinal direction are higher than resistances of the drain regions per unit length along its longitudinal direction. The control gate regions are formed on the semiconductor chip to extend in a direction perpendicular to the drain regions and the source regions. With this arrangement, the cell size can be reduced without causing deterioration of the writing characteristic and increase of the off leak current.

Abstract translation: 非易失性存储器包括多个漏极区域和多个源极区域以及多个控制栅极区域。 漏极区域和源极区域形成在半导体芯片上，以便彼此平行延伸并且在半导体芯片的相对端之间延伸，并且沿着其纵向方向每单位长度的源极区域的电阻高于 漏极区域沿其纵向方向每单位长度。 控制栅极区域形成在半导体芯片上，以在与漏极区域和源极区域垂直的方向上延伸。 利用这种布置，可以减小单元尺寸，而不会导致写入特性的劣化和漏电流的增加。