公开(公告)号：US20070093065A1

公开(公告)日：2007-04-26

申请号：US11581455

申请日：2006-10-17

Applicant: Yoshirou Tsurugida

Inventor： Yoshirou Tsurugida

IPC: H01L21/461

CPC classification number: H01L21/0209 ,  H01L21/02052 ,  H01L21/30604

Abstract: A method is used for manufacturing a semiconductor wafer. The back surface of a semiconductor wafer is ground. The back surface is cleaned with ozone water. The back surface of the semiconductor wafer is etched with a mixed acid that contains hydrofluoric acid and nitric acid. The cleaning and etching are carried out alternately such that the cleaning and etching are each repeated a plurality of times. The etching is performed after the grinding, beginning when the semiconductor wafer is wet with the ozone water. The cleaning is performed after the etching, beginning when the semiconductor wafer is wet with an etching solution.

Abstract translation: 使用半导体晶片的制造方法。 研磨半导体晶片的背面。 背面用臭氧水清洗。 用含有氢氟酸和硝酸的混合酸蚀刻半导体晶片的背面。 清洗和蚀刻交替进行，使得清洗和蚀刻各自重复多次。 在研磨之后进行蚀刻，当半导体晶片被臭氧水弄湿时开始。 在蚀刻之后进行清洁，从半导体晶片被蚀刻溶液弄湿时开始。

公开(公告)号：US06524968B2

公开(公告)日：2003-02-25

申请号：US09970692

申请日：2001-10-05

Applicant: Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

Inventor： Masashi Takahashi ,  Toshio Nagata ,  Yoshirou Tsurugida ,  Takashi Ohsako ,  Hirotaka Mori ,  Akihiko Ohara ,  Hidetsugu Uchida ,  Hiroaki Uchida ,  Katsuji Yoshida ,  Masahiro Takahashi

IPC: H01L2131

CPC classification number: H01L21/28211 ,  H01L21/02238 ,  H01L21/02337 ,  H01L21/02359 ,  H01L21/31662

Abstract: A method for forming an insulating film is provided which is capable of inhibiting spontaneous growth of a silicon oxide film formed on a silicon substrate and an increase in thickness of a film caused by exposure to an atmosphere. After having allowed a silicon dioxide layer with a predetermined thickness to grow on a surface of a silicon crystal, a surface of the silicon dioxide is exposed to organic gas containing no hydroxyl group or is exposed to ammonia gas.

Abstract translation: 提供一种形成绝缘膜的方法，其能够抑制在硅衬底上形成的氧化硅膜的自发生长和由暴露于大气中引起的膜的厚度增加。 在允许具有预定厚度的二氧化硅层在硅晶体的表面上生长之后，二氧化硅的表面暴露于不含羟基的有机气体或暴露于氨气中。

公开(公告)号：US06818567B2

公开(公告)日：2004-11-16

申请号：US10034379

申请日：2002-01-03

Applicant: Yoshirou Tsurugida

Inventor： Yoshirou Tsurugida

IPC: H01L2131

CPC classification number: H01L21/76202 ,  Y10S438/954

Abstract: The whole areas of both surfaces (10a and 10b) of a silicon wafer (10) are covered by silicon nitride films (13, 14) respectively through the intermediary of pad oxide films (11 and 12), and the pad oxide film (11) and the silicon nitride film (13) on the front surface (10a) of the wafer are patterned in desired regions and therefore the front surface (10a) is partially exposed. On the other hand, the pad oxide film (12) and the silicon nitride film (14) on the reverse surface (10b) of the wafer are removed, so the whole area of the reverse surface (10b) is exposed. By simultaneously oxidizing the regions exposed partially on the front surface (10a) of the wafer and the whole area of the reverse surface (10b) of the wafer, silicon dioxide films (15 and 16) are grown on those areas of the wafer.

Abstract translation: 硅晶片（10）的两个表面（10a和10b）的整个区域分别通过衬垫氧化物膜（11和12）的中间层被氮化硅膜（13,14）覆盖，并且衬垫氧化膜（11 ），并且晶片的前表面（10a）上的氮化硅膜（13）被图案化在期望的区域中，因此前表面（10a）被部分地暴露。 另一方面，去除晶片的反面（10b）上的衬垫氧化膜（12）和氮化硅膜（14），使得反面（10b）的整个区域露出。 通过同时氧化晶片的前表面（10a）部分暴露的区域和晶片的背面（10b）的整个区域，在晶片的那些区域上生长二氧化硅膜（15和16）。