发明授权
- 专利标题： High precision pattern forming method of manufacturing a semiconductor device
- 专利标题（中）： 制造半导体器件的高精度图案形成方法
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申请号： US09604724申请日： 2000-06-28
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公开(公告)号： US06846750B1公开(公告)日： 2005-01-25
- 发明人: Tokuhisa Ohiwa , Shoji Seta , Nobuo Hayasaka , Katsuya Okumura , Akihiro Kojima , Junko Ohuchi , Tsukasa Azuma , Hideo Ichinose , Ichiro Mizushima
- 申请人： Tokuhisa Ohiwa , Shoji Seta , Nobuo Hayasaka , Katsuya Okumura , Akihiro Kojima , Junko Ohuchi , Tsukasa Azuma , Hideo Ichinose , Ichiro Mizushima
- 申请人地址： JP Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Kawasaki
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP11-183908 19990629
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/033 ; H01L21/30 ; H01L21/306 ; H01L21/3065 ; H01L21/311 ; H01L21/316 ; H01L21/768 ; H01L21/461
摘要：
According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.
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