摘要:
According to the present invention, there is provided a method of manufacturing a semiconductor device, where a soluble thin film which is soluble in a dissolving liquid is used. According to the method of the present invention, when a soluble thin film is formed between a film to be processed which should be patterned and a mask pattern, it becomes possible to remove the mask pattern by lifting-off. On the other hand, when the thin film is used for a dummy layer for forming an air wiring structure, the dummy layer can be removed without performing ashing using oxygen plasma.
摘要:
In a method for dry-etching a coating by use of reactive gas which is activated, a second insulating layer containing carbon atoms which is formed on a first insulating layer containing carbon atoms is ashed by use of a gas containing carbon atoms and at least one of oxygen atoms, nitrogen atoms and hydrogen atoms. By using the above gas, the second insulating layer containing carbon atoms which is formed on the first insulating layer which is an underlying layer can be efficiently ashed and removed without removing carbon atoms in the side surface of the grooves formed in the first insulating layer and etching the side surface thereof. Thus, the side surface of the groove formed in the first insulating layer will not be modified or deformed.
摘要:
A dry etching method comprises sequentially laminating a first insulating layer containing carbon and a second insulating layer containing carbon on a substrate, patterning the second insulating layer to form a mask; forming grooves in the first insulating layer by etching the first insulating layer with the second insulating layer used as a mask such that each of the grooves has a side surface and a bottom surface in the first insulating layer; and removing the second insulating layer by use of a reactive gas containing carbon atoms and at least one of oxygen atoms, hydrogen atoms and nitrogen atoms.
摘要:
A semiconductor device has an LSI chip including a semiconductor substrate, an LSI core section provided at a center portion of the semiconductor substrate and serving as a multilayered wiring layer of the semiconductor substrate, a first rewiring layer provided adjacent to an outer periphery of the LSI core section on the semiconductor substrate and including a plurality of wiring layers, a first pad electrode disposed at an outer periphery of the first rewiring layer, and an insulation layer covering the first pad electrode. The semiconductor device includes a second rewiring layer provided on the LSI chip and including a rewiring connected to the first pad electrode. The semiconductor device includes a plurality of ball electrodes provided on the second rewiring layer. The first rewiring layer is electrically connected to the LSI core section and the first pad electrode.
摘要:
A semiconductor device has a semiconductor substrate which has a plurality of pad electrodes provided on a top surface thereof and has an approximately rectangular shape; a rewiring layer which is provided with a plurality of contact wiring lines connected to the plurality of pad electrodes, is disposed on the semiconductor substrate through an insulating film, and has an approximately rectangular shape; and a plurality of ball electrodes which are provided on the rewiring layer. A plurality of first pad electrodes among the plurality of pad electrodes are arranged on an outer circumference of the semiconductor substrate to be along a first side of the semiconductor substrate, a plurality of first ball electrodes among the plurality of ball electrodes are arranged on an outer circumference of the rewiring layer to be along the first side, and any one of the plurality of first ball electrodes is connected to the first pad electrode positioned below the corresponding ball electrode through the contact wiring lines, and the first pad electrodes are not disposed on the lower side of the first ball electrodes positioned at an end of the first side.
摘要:
A second resist film is formed on a first resist film and then patterned. Thereafter, an SOG film is formed on the entire surface of the resultant structure to cover the second resist film. Subsequently, the SOG film and the second resist film and the first resist film are removed to pattern the SOG film and the first resist film. After that, using the patterned the first resist film as a mask, a trench is formed.
摘要:
A semiconductor device has a semiconductor substrate. The semiconductor device has a plurality of LSI regions that are formed on the semiconductor substrate and are provided with a first power supply wiring layer including a first power supply wire. The semiconductor device has a first power supply terminal formed on the semiconductor substrate. The semiconductor device has a second power supply wiring layer including a second power supply wire that electrically connects the first power supply wire and the first power supply terminal, the second power supply wiring layer is formed in a dicing region between the LSI regions along a dicing line that separates the LSI regions and the dicing line region. A first barrier metal film is formed at least in the LSI regions at a boundary between the first power supply wire and the second power supply wire.
摘要:
A semiconductor device includes: an LCD controller configured to output a plurality of image signals in parallel; a plurality of signal lines respectively corresponding to the plurality of image signals to be outputted in parallel; a plurality of terminal portions respectively connected to the plurality of signal lines; and delay circuits configured to delay a plurality of image signals, which are divided into a plurality of groups to the extent that the sum of each value of a current flowing through each signal line does not exceed a predetermined current value and outputted from a plurality of terminal portions, by a predetermined delay time from each other among the plurality of groups.
摘要:
A programmable logic device unit, a non-volatile memory unit which stores data for programming the programmable logic device unit in a part of data storage area thereof and a control circuit which controls the non-volatile memory unit to allow the data stored in a part of the data storage area to be read at power-on time and supplied to the programmable logic device unit are integrally provided on a semiconductor chip. Based on the program data, the programmable logic device unit forms an interface for allowing the non-volatile memory unit to operate as at least one of a register, a flash memory, a random access memory, and a read-only memory.
摘要:
A computer automated design system includes a subject routing module configured to set a first grid area and a first diagonal grid area and route a first wire in the first grid area and a first diagonal wire extending diagonally to a longitudinal direction of the first wire and a next routing module configured to set a second grid area and a second diagonal grid area and route a second wire in the second grid area and a second diagonal wire extending diagonally to a longitudinal direction of the second wire.